Power electronics component onsemi FGHL50T65MQD 650 volt 50 amp field stop trench IGBT for industrial
Key Attributes
Model Number:
FGHL50T65MQD
Product Custom Attributes
Td(off):
120ns
Pd - Power Dissipation:
268W
Td(on):
21ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
10pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3V@50mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
94nC@15V
Reverse Recovery Time(trr):
32ns
Switching Energy(Eoff):
310uJ
Turn-On Energy (Eon):
410uJ
Input Capacitance(Cies):
3.226nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
85pF
Mfr. Part #:
FGHL50T65MQD
Package:
TO-247-3L
Product Description
Product Overview
The FGHL50T65MQD is a 650 V, 50 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology and full current rated copak Diode technology. It offers high current capability, low saturation voltage (1.45 V typ. at 50 A), and optimized switching characteristics. Designed for applications requiring high reliability and performance, it is suitable for solar inverters, UPS, ESS, PFC, and converters.
Product Attributes
- Brand: onsemi
- Certifications: RoHS Compliant
- Package: TO-247 LONG LEADS (CASE 340CX)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Collector-to-Emitter Voltage | VCES | 650 | V | |
| Gate-to-Emitter Voltage | VGES | 20 | V | |
| Transient Gate-to-Emitter Voltage | VGES | 30 | V | |
| Collector Current (TC = 25C) | IC | 80 | A | Value limit by bond wire |
| Collector Current (TC = 100C) | IC | 50 | A | Value limit by bond wire |
| Pulsed Collector Current | ILM | 200 | A | VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 14 , Inductive Load, 100% Tested |
| Pulsed Collector Current | ICM | 200 | A | Repetitive rating: Pulse width limited by max. junction temperature |
| Diode Forward Current (TC = 25C) | IF | 55 | A | Value limit by bond wire |
| Diode Forward Current (TC = 65C) | IF | 40 | A | Value limit by bond wire |
| Pulsed Diode Maximum Forward Current | IFM | 200 | A | |
| Non-Repetitive Forward Surge Current (tp = 8.3 ms, TC = 25C) | IF,SM | 135 | A | HalfSine Pulse |
| Non-Repetitive Forward Surge Current (tp = 8.3 ms, TC = 150C) | IF,SM | 120 | A | HalfSine Pulse |
| Maximum Power Dissipation (TC = 25C) | PD | 268 | W | |
| Maximum Power Dissipation (TC = 100C) | PD | 134 | W | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | C | |
| Maximum Lead Temperature for Soldering Purposes (1/8 from case for 5 s) | TL | 300 | C | |
| Thermal Resistance Junction-to-Case (IGBT) | RJC | 0.56 | C/W | |
| Thermal Resistance Junction-to-Case (Diode) | RJC | 1.07 | C/W | |
| Thermal Resistance Junction-to-Ambient | RJA | 40 | C/W | |
| Collector-emitter breakdown voltage (VGE = 0 V, IC = 1 mA) | BVCES | 650 | V | |
| Temperature Coefficient of Breakdown Voltage (VGE = 0 V, IC = 1 mA) | BVCES/TJ | -0.6 | V/C | |
| Collector-emitter cut-off current (VGE = 0 V, VCE = 650 V) | ICES | 250 | A | |
| Gate leakage current (VGE = 20 V, VCE = 0 V) | IGES | 400 | nA | |
| Gate-emitter threshold voltage (VCE = IC, IC = 50 mA) | VGE(th) | 3.0 - 4.5 - 6.0 | V | |
| Collector-emitter saturation voltage (VGE = 15 V, IC = 50 A) | VCE(sat) | 1.45 | V | Typ. |
| Collector-emitter saturation voltage (VGE = 15 V, IC = 50 A, TJ = 175C) | VCE(sat) | 1.77 | V | |
| Input capacitance (VCE = 30 V, VGE = 0 V, f = 1 MHz) | Cies | 3226 | pF | |
| Output capacitance (VCE = 30 V, VGE = 0 V, f = 1 MHz) | Coes | 85 | pF | |
| Reverse transfer capacitance (VCE = 30 V, VGE = 0 V, f = 1 MHz) | Cres | 10 | pF | |
| Gate charge total (VCE = 400 V, IC = 50 A, VGE = 15 V) | Qg | 94 | nC | |
| Gate-to-Emitter charge | Qge | 17 | nC | |
| Gate-to-Collector charge | Qgc | 22 | nC | |
| Turn-on delay time (TC = 25C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | td(on) | 21 | ns | Inductive Load |
| Rise time (TC = 25C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | tr | 15 | ns | Inductive Load |
| Turn-off delay time (TC = 25C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | td(off) | 128 | ns | Inductive Load |
| Fall time (TC = 25C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | tf | 50 | ns | Inductive Load |
| Turn-on switching loss (TC = 25C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | Eon | 0.41 | mJ | Inductive Load |
| Turn-off switching loss (TC = 25C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | Eoff | 0.31 | mJ | Inductive Load |
| Total switching loss (TC = 25C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | Ets | 0.72 | mJ | Inductive Load |
| Turn-on delay time (TC = 25C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | td(on) | 23 | ns | Inductive Load |
| Rise time (TC = 25C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | tr | 34 | ns | Inductive Load |
| Turn-off delay time (TC = 25C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | td(off) | 120 | ns | Inductive Load |
| Fall time (TC = 25C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | tf | 46 | ns | Inductive Load |
| Turn-on switching loss (TC = 25C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | Eon | 1.05 | mJ | Inductive Load |
| Turn-off switching loss (TC = 25C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | Eoff | 0.70 | mJ | Inductive Load |
| Total switching loss (TC = 25C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | Ets | 1.75 | mJ | Inductive Load |
| Turn-on delay time (TC = 175C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | td(on) | 20 | ns | Inductive Load |
| Rise time (TC = 175C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | tr | 17 | ns | Inductive Load |
| Turn-off delay time (TC = 175C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | td(off) | 146 | ns | Inductive Load |
| Fall time (TC = 175C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | tf | 75 | ns | Inductive Load |
| Turn-on switching loss (TC = 175C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | Eon | 0.75 | mJ | Inductive Load |
| Turn-off switching loss (TC = 175C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | Eoff | 0.53 | mJ | Inductive Load |
| Total switching loss (TC = 175C, VCC = 400 V, IC = 25 A, RG = 10 , VGE = 15 V) | Ets | 1.28 | mJ | Inductive Load |
| Turn-on delay time (TC = 175C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | td(on) | 22 | ns | Inductive Load |
| Rise time (TC = 175C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | tr | 36 | ns | Inductive Load |
| Turn-off delay time (TC = 175C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | td(off) | 130 | ns | Inductive Load |
| Fall time (TC = 175C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | tf | 58 | ns | Inductive Load |
| Turn-on switching loss (TC = 175C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | Eon | 1.63 | mJ | Inductive Load |
| Turn-off switching loss (TC = 175C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | Eoff | 0.94 | mJ | Inductive Load |
| Total switching loss (TC = 175C, VCC = 400 V, IC = 50 A, RG = 10 , VGE = 15 V) | Ets | 2.57 | mJ | Inductive Load |
| Diode Forward Voltage (IF = 50 A, TC = 25C) | VFM | 2.45 | V | |
| Diode Forward Voltage (IF = 50 A, TC = 175C) | VFM | 2.2 | V | |
| Reverse Recovery Energy (IF = 50 A, dlF/dt = 200 A/s, TC = 175C) | Erec | 57 | J | |
| Diode Reverse Recovery Time (IF = 50 A, dlF/dt = 200 A/s, TC = 25C) | Trr | 32 | ns | |
| Diode Reverse Recovery Time (IF = 50 A, dlF/dt = 200 A/s, TC = 175C) | Trr | 202 | ns | |
| Diode Reverse Recovery Charge (IF = 50 A, dlF/dt = 200 A/s, TC = 25C) | Qrr | 46 | nC | |
| Diode Reverse Recovery Charge (IF = 50 A, dlF/dt = 200 A/s, TC = 175C) | Qrr | 814 | nC |
2410010231_onsemi-FGHL50T65MQD_C898202.pdf
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