PANJIT BSS84DW R1 00001 dual P channel MOSFET with two isolated transistors in small SOT 363 package
Key Attributes
Model Number:
BSS84DW_R1_00001
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
RDS(on):
10Ω@5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@1mA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
2 P-Channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
45pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
BSS84DW_R1_00001
Package:
SOT-363(SC-70-6L)
Product Description
Product Description
The BSS84DW is a dual P-channel enhancement-mode MOSFET featuring two electrically-isolated MOSFETs housed in a compact SOT-363 (SC70-6L) package. This device is designed for portable applications where space is a critical factor. Its key advantages include low on-resistance, low gate threshold voltage, and fast switching capabilities. It is ideal for use in switching power supplies and hand-held computers/PDAs.
Product Attributes
- Brand: Panjit
- Package: SOT-363 (SC70-6L)
- Certifications: EU RoHS 2011/65/EU directive, Halogen Free (IEC61249 Std.)
- Marking Code: S84
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | -50 | V | |||
| Drain-Gate Voltage | VDGR | (Note 1) | -50 | V | ||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Drain Current | ID | TJ = 25°C Unless otherwise noted | -130 | mA | ||
| Total Power Dissipation | PD | (Note 2) | 200 | mW | ||
| Operating Junction Temperature Range | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction to Ambient | RθJA | (Note 2) | 625 | °C/W | ||
| ELECTRICAL CHARACTERISTICS (Each Device) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = -250µA, VGS = 0V | -50 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -50V, VGS = 0V, TJ = 25°C | -1 | µA | ||
| VDS = -50V, VGS = 0V, TJ = 125°C | -15 | µA | ||||
| Gate-Body Leakage | IGSS | VGS = ±20V, VDS = 0V | ±10 | nA | ||
| OFF CHARACTERISTICS (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -1mA | -0.8 | -1.44 | -2.0 | V |
| ON CHARACTERISTICS (Note 3) | ||||||
| Static Drain-Source On-Resistance | RDS(ON) | VGS = -4.5V, ID = -0.1A | 3.8 | 10 | Ohms | |
| VGS = -10V, ID = -0.1A | 0.05 | 0.1 | Ohms | |||
| Forward Transconductance | gFS | VDS = -25V, ID = -0.1A | 0.05 | S | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | VDS = -25V, VGS = 0V, f = 1.0MHz | 45 | pF | ||
| Reverse Transfer Capacitance | Crss | 12 | pF | |||
| Output Capacitance | Coss | 25 | pF | |||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | tD(ON) | VDD = -30V, ID = -0.27A, RL = 50Ω, VGS = -10V | 7.5 | ns | ||
| Turn-Off Delay Time | tD(OFF) | 25 | ns | |||
2410010403_PANJIT-BSS84DW-R1-00001_C2901418.pdf
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