Fast Switching Field Stop Trench IGBT onsemi AFGHL50T65SQD with 650V Voltage and High Current Capability
Key Attributes
Model Number:
AFGHL50T65SQD
Product Custom Attributes
Pd - Power Dissipation:
268W
Td(off):
81ns
Td(on):
20ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.4V@50mA
Gate Charge(Qg):
102nC@15V
Operating Temperature:
-55℃~+175℃
Reverse Recovery Time(trr):
30ns
Switching Energy(Eoff):
460uJ
Turn-On Energy (Eon):
950uJ
Input Capacitance(Cies):
3.258nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
85pF
Mfr. Part #:
AFGHL50T65SQD
Package:
TO-247-3L
Product Description
Product Overview
The AFGHL50T65SQD is a Field Stop Trench IGBT utilizing 4th generation high-speed technology. It is AEC Q101 qualified and offers optimal performance for both hard and soft switching topologies in automotive applications. Key advantages include its high current capability, low saturation voltage, fast switching, and tight parameter distribution, making it suitable for parallel operation.
Product Attributes
- Brand: onsemi (Semiconductor Components Industries, LLC)
- Certifications: AECQ101 Qualified, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-to-Emitter Voltage | VCES | 650 | V | |
| Gate-to-Emitter Voltage | VGES | ±20 | V | |
| Transient Gate-to-Emitter Voltage | ±30 | V | ||
| Collector Current @ TC = 25°C | IC | 80 | A | Note 1 |
| Collector Current @ TC = 100°C | IC | 50 | A | Note 1 |
| Pulsed Collector Current | ILM | 200 | A | Note 2 |
| Pulsed Collector Current | ICM | 200 | A | Note 3 |
| Diode Forward Current @ TC = 25°C | IF | 80 | A | Note 1 |
| Diode Forward Current @ TC = 100°C | IF | 30 | A | Note 1 |
| Pulsed Diode Maximum Forward Current | IFM | 200 | A | |
| Maximum Power Dissipation @ TC = 25°C | PD | 268 | W | |
| Maximum Power Dissipation @ TC = 100°C | PD | 134 | W | |
| Operating Junction / Storage Temperature Range | TJ, TSTG | -55 to +175 | °C | |
| Maximum Lead Temp. for Soldering Purposes | TL | 300 | °C | 1/8″ from case for 5 seconds |
| Thermal resistance junction-to-case (IGBT) | R JC | 0.56 | °C/W | |
| Thermal resistance junction-to-case (Diode) | R JC | 1.25 | °C/W | |
| Thermal resistance junction-to-ambient | R JA | 40 | °C/W | |
| Collector-emitter breakdown voltage | BVCES | 650 | V | VGE = 0 V, IC = 1 mA |
| Temperature Coefficient of Breakdown Voltage | ∂BVCES / ∂TJ | -0.6 | V/°C | VGE = 0 V, IC = 1 mA |
| Collector-emitter cut-off current | ICES | 250 | μA | VGE = 0 V, VCE = 650 V |
| Gate leakage current | IGES | ±400 | nA | VGE = 20 V, VCE = 0 V |
| Gate-emitter threshold voltage | VGE(th) | 3.4 - 6.4 | V | VGE = VCE, IC = 50 mA |
| Collector-emitter saturation voltage | VCE(sat) | 1.6 (Typ.) | V | VGE = 15 V, IC = 50 A |
| Collector-emitter saturation voltage | VCE(sat) | 1.95 - 2.1 | V | VGE = 15 V, IC = 50 A, TJ = 175°C |
| Input capacitance | Cies | 3258 (Typ.) | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output capacitance | Coes | 85 (Typ.) | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse transfer capacitance | Cres | 11 (Typ.) | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Gate charge total | Qg | 102 (Typ.) | nC | VCE = 400 V, IC = 50 A, VGE = 15 V |
| Gate-to-emitter charge | Qge | 18 (Typ.) | nC | VCE = 400 V, IC = 50 A, VGE = 15 V |
| Gate-to-collector charge | Qgc | 24 (Typ.) | nC | VCE = 400 V, IC = 50 A, VGE = 15 V |
| Turn-on delay time | td(on) | 19 (Typ.) | ns | TC = 25°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Rise time | tr | 11 (Typ.) | ns | TC = 25°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-off delay time | td(off) | 87 (Typ.) | ns | TC = 25°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Fall time | tf | 5 (Typ.) | ns | TC = 25°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-on switching loss | Eon | 0.35 (Typ.) | mJ | TC = 25°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-off switching loss | Eoff | 0.12 (Typ.) | mJ | TC = 25°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Total switching loss | Ets | 0.47 (Typ.) | mJ | TC = 25°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-on delay time | td(on) | 20 (Typ.) | ns | TC = 25°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Rise time | tr | 28 (Typ.) | ns | TC = 25°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-off delay time | td(off) | 81 (Typ.) | ns | TC = 25°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Fall time | tf | 36 (Typ.) | ns | TC = 25°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-on switching loss | Eon | 0.95 (Typ.) | mJ | TC = 25°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-off switching loss | Eoff | 0.46 (Typ.) | mJ | TC = 25°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Total switching loss | Ets | 1.41 (Typ.) | mJ | TC = 25°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-on delay time | td(on) | 18 (Typ.) | ns | TC = 175°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Rise time | tr | 14 (Typ.) | ns | TC = 175°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-off delay time | td(off) | 99 (Typ.) | ns | TC = 175°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Fall time | tf | 7 (Typ.) | ns | TC = 175°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-on switching loss | Eon | 0.66 (Typ.) | mJ | TC = 175°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-off switching loss | Eoff | 0.3 (Typ.) | mJ | TC = 175°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Total switching loss | Ets | 0.96 (Typ.) | mJ | TC = 175°C, VCC = 400 V, IC = 25 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-on delay time | td(on) | 20 (Typ.) | ns | TC = 175°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Rise time | tr | 29 (Typ.) | ns | TC = 175°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-off delay time | td(off) | 88 (Typ.) | ns | TC = 175°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Fall time | tf | 46 (Typ.) | ns | TC = 175°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-on switching loss | Eon | 1.42 (Typ.) | mJ | TC = 175°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Turn-off switching loss | Eoff | 0.65 (Typ.) | mJ | TC = 175°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Total switching loss | Ets | 2.07 (Typ.) | mJ | TC = 175°C, VCC = 400 V, IC = 50 A, RG = 4.7 Ω, VGE = 15 V |
| Diode Forward Voltage | VFM | 2.0 - 2.6 | V | IF = 30 A, TC = 25°C |
| Diode Forward Voltage | VFM | 1.7 (Typ.) | V | IF = 30 A, TC = 175°C |
| Reverse Recovery Energy | Erec | 50 (Typ.) | μJ | IF = 30 A, dlF/dt = 200 A/μs, TC = 175°C |
| Diode Reverse Recovery Time | Trr | 30 (Typ.) | ns | IF = 30 A, dlF/dt = 200 A/μs, TC = 25°C |
| Diode Reverse Recovery Time | Trr | 194 (Typ.) | ns | IF = 30 A, dlF/dt = 200 A/μs, TC = 175°C |
| Diode Reverse Recovery Charge | Qrr | 42 (Typ.) | nC | IF = 30 A, dlF/dt = 200 A/μs, TC = 25°C |
| Diode Reverse Recovery Charge | Qrr | 723 (Typ.) | nC | IF = 30 A, dlF/dt = 200 A/μs, TC = 175°C |
2410121854_onsemi-AFGHL50T65SQD_C898108.pdf
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