Motion SPM 45 inverter module onsemi FNA41560T2 designed for motor control in industrial environments
Product Overview
The FNA41560T2 is a Motion SPM 45 module designed for AC Induction, BLDC, and PMSM motors. It provides a fully-featured, high-performance inverter output stage with integrated gate drivers and protection features. Key advantages include low EMI and losses due to optimized gate drive, under-voltage lockout, over-current shutdown, thermal monitoring, and fault reporting. It simplifies PCB layout with built-in bootstrap diodes and dedicated Vs pins, and supports various control algorithms with separate open-emitter pins for low-side IGBTs. Applications include home appliances and industrial motor control.
Product Attributes
- Brand: onsemi (formerly Fairchild Semiconductor)
- Series: Motion SPM 45
- Certifications: UL Certified No. E209204 (UL1557)
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit | Notes |
| Inverter Part | ||||||
| Supply Voltage (VPN) | Applied between P - NU, NV, NW | 450 | V | |||
| Supply Voltage (Surge) (VPN(Surge)) | Applied between P - NU, NV, NW | 500 | V | |||
| Collector - Emitter Voltage (VCES) | 600 | V | ||||
| Collector Current (IC) | TC = 25C, TJ 150C | 15 | A | Each IGBT | ||
| Collector Current (Peak) (ICP) | TC = 25C, TJ 150C, Under 1 ms Pulse Width | 30 | A | Each IGBT (Note 4) | ||
| Collector Dissipation (PC) | TC = 25C per One Chip | 38 | W | (Note 4) | ||
| Operating Junction Temperature (TJ) | -40 | 150 | C | |||
| Collector - Emitter Saturation Voltage (VCE(SAT)) | VDD = VBS = 15 V, VIN = 5 V, IC = 15 A, TJ = 25C | 1.60 | 2.20 | V | ||
| Switching Times (tON) | VPN = 300 V, VDD = VBS = 15 V, IC = 15 A, TJ = 25C, Inductive Load | 0.40 | 0.80 | ms | High-Side (Note 6) | |
| Switching Times (tOFF) | VPN = 300 V, VDD = VBS = 15 V, IC = 15 A, TJ = 25C, Inductive Load | 0.85 | 1.35 | ms | High-Side (Note 6) | |
| Switching Times (tON) | VPN = 300 V, VDD = VBS = 15 V, IC = 15 A, TJ = 25C, Inductive Load | 0.45 | 0.85 | ms | Low-Side (Note 6) | |
| Switching Times (tOFF) | VPN = 300 V, VDD = VBS = 15 V, IC = 15 A, TJ = 25C, Inductive Load | 0.90 | 1.40 | ms | Low-Side (Note 6) | |
| Collector - Emitter Leakage Current (ICES) | VCE = VCES | 1 | mA | |||
| Control Part | ||||||
| Control Supply Voltage (VDD) | Applied between VDD(H), VDD(L) - COM | 20 | V | |||
| High-Side Control Bias Voltage (VBS) | Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) | 20 | V | |||
| Input Signal Voltage (VIN) | Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM | -0.3 | VDD + 0.3 | V | ||
| Fault Output Supply Voltage (VFO) | Applied between VFO - COM | -0.3 | VDD + 0.3 | V | ||
| Fault Output Current (IFO) | Sink Current at VFO pin | 1 | mA | |||
| Current-Sensing Input Voltage (VSC) | Applied between CSC - COM | -0.3 | VDD + 0.3 | V | ||
| Quiescent VDD Supply Current (IQDDH) | VDD(H) = 15 V, IN(UH,VH,WH) = 0 V | 0.10 | mA | VDD(H) - COM | ||
| Quiescent VDD Supply Current (IQDDL) | VDD(L) = 15 V, IN(UL,VL, WL) = 0 V | 2.65 | mA | VDD(L) - COM | ||
| Operating VDD Supply Current (IPDDH) | VDD(H) = 15 V, fPWM = 20 kHz, duty = 50%, One PWM Sig- nal Input for High-Side | 0.15 | mA | VDD(H) - COM | ||
| Operating VDD Supply Current (IPDDL) | VDD(L) = 15 V, fPWM = 20 kHz, duty = 50%, One PWM Sig- nal Input for Low-Side | 4.00 | mA | VDD(L) - COM | ||
| Quiescent VBS Supply Current (IQBS) | VBS = 15 V, IN(UH, VH, WH) = 0 V | 0.30 | mA | VB(U) - VS(U), etc. | ||
| Operating VBS Supply Current (IPBS) | VDD = VBS = 15 V, fPWM = 20 kHz, Duty = 50%, One PWM Signal Input for High-Side | 2.00 | mA | VB(U) - VS(U), etc. | ||
| Bootstrap Diode Part | ||||||
| Maximum Repetitive Reverse Voltage (VRRM) | 600 | V | ||||
| Forward Current (IF) | TC = 25C, TJ 150C | 0.5 | A | |||
| Forward Current (Peak) (IFP) | TC = 25C, TJ 150C, Under 1 ms Pulse Width | 2.0 | A | (Note 4) | ||
| Operating Junction Temperature (TJ) | -40 | 150 | C | |||
| Total System | ||||||
| Self-Protection Supply Voltage Limit (VPN(PROT)) | Short-Circuit Protection Capability | 400 | V | TJ = 150C, Non-Repetitive, < 2 ms (Note 4) | ||
| Module Case Operation Temperature (TC) | -40 | 125 | C | See Figure 2 | ||
| Storage Temperature (TSTG) | -40 | 125 | C | |||
| Isolation Voltage (VISO) | 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat Sink Plate | 2000 | Vrms | |||
| Junction to Case Thermal Resistance (Rth(j-c)Q) | Inverter IGBT Part (per 1 / 6 module) | 3.20 | C / W | (Note 5) | ||
| Junction to Case Thermal Resistance (Rth(j-c)F) | Inverter FWDi Part (per 1 / 6 module) | 4.00 | C / W | |||
2411261530_onsemi-FNA41560T2_C411214.pdf
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