Silicon Carbide FET onsemi UJ4C075018K3S 750 Volt 18 Milliamp TO247 Package Ultra Low Gate Charge
Key Attributes
Model Number:
UJ4C075018K3S
Product Custom Attributes
Mfr. Part #:
UJ4C075018K3S
Package:
TO-247-3
Product Description
Product Overview
The UJ4C075018K3S is a 750 V, 18 m Silicon Carbide (SiC) FET designed with a unique cascode circuit configuration. This configuration pairs a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET device. Its standard gate-drive characteristics enable it to be a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si super-junction devices. Available in a TO247-3 package, this device offers ultra-low gate charge and exceptional reverse recovery, making it suitable for switching inductive loads and applications requiring standard gate drive.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 750 | V | |||
| Gate-Source Voltage | VGS | DC | -20 | +20 | V | |
| Gate-Source Voltage | VGS | AC (f > 1 Hz) | -25 | +25 | V | |
| Continuous Drain Current | ID | TC = 25 C | 81 | A | ||
| Continuous Drain Current | ID | TC = 100 C | 60 | A | ||
| Pulsed Drain Current | IDM | TC = 25 C | 205 | A | ||
| Single Pulsed Avalanche Energy | EAS | L = 15 mH, IAS = 3.6 A | 97.2 | mJ | ||
| Power Dissipation | Ptot | TC = 25 C | 385 | W | ||
| Maximum Junction Temperature | TJ,max | 175 | C | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | C | ||
| Max. Lead Temperature for Soldering, 1/8 from Case for 5 Seconds | TL | 250 | C | |||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.3 | 0.39 | C/W | ||
| ELECTRICAL CHARACTERISTICS (TJ = 25 C unless otherwise specified) | ||||||
| TYPICAL PERFORMANCE - STATIC | ||||||
| Drain-Source Breakdown Voltage | BVDS | VGS = 0 V, ID = 1 mA | 750 | V | ||
| Total Drain Leakage Current | IDSS | VDS = 750 V, VGS = 0 V, TJ = 25 C | 1.3 | 125 | A | |
| Total Drain Leakage Current | IDSS | VDS = 750 V, VGS = 0 V, TJ = 175C | 20 | A | ||
| Total Gate Leakage Current | IGSS | VDS = 0 V, VGS = -20 V / + 20 V | 4.7 | 20 | nA | |
| Drain-Source On-resistance | RDS(on) | VGS = 12 V, ID = 50 A, TJ = 25 C | 18 | 23 | m | |
| Drain-Source On-resistance | RDS(on) | VGS = 12 V, ID = 50 A, TJ = 125 C | 31 | m | ||
| Drain-Source On-resistance | RDS(on) | VGS = 12 V, ID = 50 A, TJ = 175 C | 41 | m | ||
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 4 | 4.8 | 6 | V |
| Gate Resistance | RG | f = 1 MHz, open drain | 4.5 | |||
| TYPICAL PERFORMANCE - REVERSE DIODE | ||||||
| Diode Continuous Forward Current | IS | TC = 25 C | 81 | A | ||
| Diode Pulse Current | IS,pulse | TC = 25 C | 205 | A | ||
| Forward Voltage | VFSD | VGS = 0 V, IS = 20 A, TJ = 25 C | 1.14 | 1.46 | V | |
| Forward Voltage | VFSD | VGS = 0 V, IS = 20 A, TJ = 175 C | 1.35 | V | ||
| Reverse Recovery Charge | Qrr | VDS = 400 V, IS = 50 A, VGS = 0 V, RG_EXT = 50 , di/dt = 1400 A/s, TJ = 25 C | 102 | nC | ||
| Reverse Recovery Time | trr | VDS = 400 V, IS = 50 A, VGS = 0 V, RG_EXT = 50 , di/dt = 1400 A/s, TJ = 25 C | 25 | ns | ||
| Reverse Recovery Charge | Qrr | VDS = 400 V, IS = 50 A, VGS = 0 V, RG_EXT = 50 , di/dt = 1400 A/s, TJ = 150 C | 109 | nC | ||
| Reverse Recovery Time | trr | VDS = 400 V, IS = 50 A, VGS = 0 V, RG_EXT = 50 , di/dt = 1400 A/s, TJ = 150 C | 27 | ns | ||
| TYPICAL PERFORMANCE - DYNAMIC | ||||||
| Input Capacitance | Ciss | VDS = 400 V, VGS = 0 V, f = 100 kHz | 1414 | pF | ||
| Output Capacitance | Coss | 118 | pF | |||
| Reverse Transfer Capacitance | Crss | 2 | pF | |||
| Effective Output Capacitance, Energy Related | Coss(er) | VDS = 0 V to 400 V, VGS = 0 V | 150 | pF | ||
| Effective Output Capacitance, Time Related | Coss(tr) | 280 | pF | |||
| COSS Stored Energy | Eoss | VDS = 400 V, VGS = 0 V | 12 | J | ||
| Total Gate Charge | QG | VDS = 400 V, ID = 50 A, VGS = 0 V to 15 V | 37.8 | nC | ||
| Gate-Drain Charge | QGD | 8 | nC | |||
| Gate-Source Charge | QGS | 11.8 | nC | |||
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 50 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 50 , Inductive Load, TJ = 25 C | 13 | ns | ||
| Rise Time | tr | 56 | ns | |||
| Turn-off Delay Time | td(off) | 139 | ns | |||
| Fall Time | tf | 21 | ns | |||
| Turn-on Energy | EON | 615 | J | |||
| Turn-off Energy | EOFF | 518 | J | |||
| Total Switching Energy | ETOTAL | 1133 | J | |||
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 50 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 50 , Inductive Load, TJ = 150 C | 13 | ns | ||
| Rise Time | tr | 62 | ns | |||
| Turn-off Delay Time | td(off) | 147 | ns | |||
| Fall Time | tf | 22 | ns | |||
| Turn-on Energy | EON | 670 | J | |||
| Turn-off Energy | EOFF | 573 | J | |||
| Total Switching Energy | ETOTAL | 1243 | J | |||
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 50 A, Gate Driver = 0 V to +15 V, RG,EXT = 1 , Inductive Load, RC snubber: RS1 = 10 and CS1 = 300 pF, TJ = 25 C | 13 | ns | ||
| Rise Time | tr | 61 | ns | |||
| Turn-off Delay Time | td(off) | 33 | ns | |||
| Fall Time | tf | 17 | ns | |||
| Turn-on Energy Including RS Energy | EON | 696 | J | |||
| Turn-off Energy Including RS Energy | EOFF | 217 | J | |||
| Total Switching Energy | ETOTAL | 913 | J | |||
| Snubber RS Energy During Turn-on | ERS_ON | 4 | J | |||
| Snubber RS Energy During Turn-off | ERS_OFF | 8 | J | |||
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 50 A, Gate Driver = 0 V to +15 V, RG,EXT = 1 , Inductive Load, RC snubber: RS1 = 10 and CS1 = 300 pF, TJ = 150 C | 15 | ns | ||
| Rise Time | tr | 64 | ns | |||
| Turn-off Delay Time | td(off) | 36 | ns | |||
| Fall Time | tf | 18 | ns | |||
| Turn-on Energy Including RS Energy | EON | 744 | J | |||
| Turn-off Energy Including RS Energy | EOFF | 229 | J | |||
| Total Switching Energy | ETOTAL | 973 | J | |||
| Snubber RS Energy During Turn-on | ERS_ON | 4 | J | |||
| Snubber RS Energy During Turn-off | ERS_OFF | 8 | J | |||
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 50 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 50 , Inductive Load, FWD: UJ3D06530TS, TJ = 25 C | 14 | ns | ||
| Rise Time | tr | 54 | ns | |||
| Turn-off Delay Time | td(off) | 139 | ns | |||
| Fall Time | tf | 21 | ns | |||
| Turn-on Energy | EON | 619 | J | |||
| Turn-off Energy | EOFF | 549 | J | |||
| Total Switching Energy | ETOTAL | 1168 | J | |||
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 50 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 50 , Inductive Load, FWD: UJ3D06530TS, TJ = 150 C | 14 | ns | ||
| Rise Time | tr | 59 | ns | |||
| Turn-off Delay Time | td(off) | 140 | ns | |||
| Fall Time | tf | 24 | ns | |||
| Turn-on Energy | EON | 665 | J | |||
| Turn-off Energy | EOFF | 611 | J | |||
| Total Switching Energy | ETOTAL | 1276 | J | |||
| Typical Applications | ||||||
| EV Charging | ||||||
| PV Inverters | ||||||
| Switch Mode Power Supplies | ||||||
| Power Factor Correction Modules | ||||||
| Motor Drives | ||||||
| Induction Heating | ||||||
2509301015_onsemi-UJ4C075018K3S_C45343210.pdf
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