Digital transistor onsemi MUN5111DW1T1G featuring monolithic bias network for and compact circuit designs
Key Attributes
Model Number:
MUN5111DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MUN5111DW1T1G
Package:
SOT-363
Product Description
Product Overview
This series of digital transistors integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. Designed to replace individual components and external bias networks, these Bias Resistor Transistors (BRTs) simplify circuit design, reduce board space, and decrease component count. They are suitable for various applications where space and cost efficiency are critical.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S and NSV Prefix), RoHS Compliant, PbFree, Halogen Free/BFR Free
Technical Specifications
| Device | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 |
| MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 | SOT-363, SOT-563, SOT-963 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 10 k | 10 k |
| Characteristic | Symbol | MUN5111DW1 (SOT-363) Max | NSBA114EDXV6 (SOT-563) Max | NSBA114EDP6 (SOT-963) Max | Unit |
| Total Device Dissipation (One Junction Heated, TA = 25C) | PD | 187 | 357 | 231 | mW |
| Total Device Dissipation (Both Junctions Heated, TA = 25C) | PD | 250 | 500 | 339 | mW |
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 670 | 350 | 540 | C/W |
| Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 493 | 250 | 369 | C/W |
| Junction and Storage Temperature Range | TJ, Tstg | +150 | +150 | +150 | C |
| Characteristic | Symbol | Min | Typ | Max | Unit |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.5 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 35 | 60 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Voltage (off) | Vi(off) | - | 1.2 | - | Vdc |
| Input Voltage (on) | Vi(on) | - | 2.2 | - | Vdc |
| Output Voltage (on) | VOL | - | - | 0.2 | Vdc |
| Output Voltage (off) | VOH | 4.9 | - | - | Vdc |
| Input Resistor | R1 | 7.0 | 10 | 13 | k |
| Resistor Ratio | R1/R2 | 0.8 | 1.0 | 1.2 | - |
2410122030_onsemi-MUN5111DW1T1G_C179092.pdf
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