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quality 650 volt 30 amp inverter power module onsemi NFAM3065L4BT with undervoltage lockout and bootstrap diodes factory
quality 650 volt 30 amp inverter power module onsemi NFAM3065L4BT with undervoltage lockout and bootstrap diodes factory

650 volt 30 amp inverter power module onsemi NFAM3065L4BT with undervoltage lockout and bootstrap diodes

Key Attributes
Model Number: NFAM3065L4BT
Product Custom Attributes
Mfr. Part #:
NFAM3065L4BT
Package:
DIP-39(31.0x54.5)
Product Description

Intelligent Power Module (IPM), 650 V, 30 A NFAM3065L4BT

The NFAM3065L4BT is a fully-integrated inverter power module designed for driving permanent magnet synchronous (PMSM) motors, brushless DC (BLDC) motors, and AC asynchronous motors. It features an independent High-side gate driver, LVIC, six IGBTs, and a temperature sensor. The module's three-phase bridge configuration with separate emitter connections for lower legs offers flexibility in control algorithms. Key advantages include undervoltage lockout protection (UVP) and integrated bootstrap diodes.

Product Attributes

  • Brand: onsemi
  • Product Code: NFAM3065L4BT
  • Certifications: UL1557 Certified (File No.339285)
  • Compliance: PbFree and RoHS Compliant

Technical Specifications

ParameterValueConditions
Supply Voltage (VPN)650 VCollector-emitter Voltage (VCES)
Supply Voltage (VPN, Surge)550 VPNU, NV, NW (Surge)
Supply Voltage Limit (Self Protection)400 VVPN(PROT)
Collector Current (Each IGBT)±30 A±Ic
Collector Current (Peak, Each IGBT)±60 A±Icp, Under 1ms Pulse Width
Control Supply Voltage (VDD)-0.3 to 20 VVDD(UH,VH,WH), VDD(L)VSS
High-Side Control Bias Voltage (VBS)-0.3 to 20 VVB(U)VS(U), VB(V)VS(V), VB(W)VS(W)
Input Signal Voltage-0.3 to VDD VHIN, LIN VSS
Operating Junction Temperature-40 to +150 °CTj
Storage Temperature-40 to +125 °CTstg
Module Case Operation Temperature-40 to +125 °CTc
Isolation Voltage2500 V rms60 Hz, Sinusoidal, AC 1 minute, Pins to Heat Sink Plate
Junction-to-Case Thermal Resistance (IGBT)1.1 °C/WRth(j-c)Q (per 1/6 module)
Junction-to-Case Thermal Resistance (FWD)2.2 °C/WRth(j-c)F (per 1/6 module)
Supply Voltage (VPN)300 - 400 VRecommended Operating
Gate Driver Supply Voltages (VDD)13.5 - 16.5 VRecommended Operating
High-Side Control Bias Voltage (VBS)13.0 - 18.5 VRecommended Operating
PWM Frequency1 - 20 kHzRecommended Operating
Allowable r.m.s. Current25.7 A rmsIo, VPN = 300 V, VDD = 15 V, P.F. = 0.8, Tc ≤ 125°C, Tj ≤ 150°C, fPWM = 5 kHz
Allowable r.m.s. Current18.8 A rmsIo, VPN = 300 V, VDD = 15 V, P.F. = 0.8, Tc ≤ 125°C, Tj ≤ 150°C, fPWM = 15 kHz
Collector-Emitter Leakage Current1 mAIces, Vce = Vces, Tj = 25°C
Collector-Emitter Leakage Current10 mAIces, Vce = Vces, Tj = 150°C
Collector-Emitter Saturation Voltage1.60 - 2.30 VVCE(sat), Ic = 30 A, Tj = 25°C
Collector-Emitter Saturation Voltage1.80 VVCE(sat), Ic = 30 A, Tj = 150°C
FWD Forward Voltage2.00 - 2.40 VVF, Ic = 30 A, Tj = 25°C
FWD Forward Voltage2.00 VVF, Ic = 30 A, Tj = 150°C
Switching Times (ton)0.80 - 1.85 µsHigh Side, Inductive Load, Tj = 25°C
Switching Times (toff)1.60 - 2.20 µsHigh Side, Inductive Load, Tj = 25°C
Switching Times (ton)0.80 - 2.00 µsLow Side, Inductive Load, Tj = 25°C
Switching Times (toff)1.60 - 2.20 µsLow Side, Inductive Load, Tj = 25°C
Quiescent VDD Supply Current (High-Side)0.30 mAIQDDH
Quiescent VDD Supply Current (Low-Side)3.50 mAIQDDL
Operating VDD Supply Current (High-Side)0.40 mAIPDDH, fPWM = 20 kHz, Duty = 50%
Operating VDD Supply Current (Low-Side)6.00 mAIPDDL, fPWM = 20 kHz, Duty = 50%
Quiescent VBS Supply Current0.30 mAIQBS
Operating VBS Supply Current5.00 mAIPBS, fPWM = 20 kHz, Duty = 50%
ON Threshold Voltage2.6 VVIN(ON)

2411271958_onsemi-NFAM3065L4BT_C897547.pdf

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