inverter output stage onsemi NFA50460R4B with multiple protection features and open emitter terminals
Key Attributes
Model Number:
NFA50460R4B
Product Custom Attributes
Voltage - Isolation:
1500Vrms
Mfr. Part #:
NFA50460R4B
Product Description
Product Overview
The NFA50460R4B/7 is an advanced Motion SPM5 module designed for high-performance inverter output stages in AC induction, BLDC, and PMSM motors. It integrates optimized gate drive with FS4 RC IGBT technology to reduce EMI and losses, and includes multiple on-module protection features like under-voltage lockouts and thermal monitoring. The module's built-in driver IC simplifies design by requiring only a single supply voltage and translating logic-level inputs to high-voltage drive signals. Separate open emitter IGBT terminals per phase support diverse control algorithms.
Product Attributes
- Brand: onsemi
- Certifications: RoHS Compliant
- Moisture Sensitive Level (MSL): 3 for SMD PKG
- Isolation Rating: 1500 Vrms/min.
Technical Specifications
| Parameter | Conditions | Rating | Unit |
|---|---|---|---|
| INVERTER PART (Each IGBT Unless Otherwise Specified) | |||
| Supply Voltage | Applied between P NU, NV, NW | 450 | V |
| Supply Voltage (Surge) | Applied between P NU, NV, NW | 500 | V |
| Collector Emitter Voltage | 600 | V | |
| Collector Current | TC = 25C, VDD = 15 V, TJ < 150C | 4 | A |
| Collector Current, Peak | TC = 25C, VDD = 15 V, TJ < 150C, Under 1 ms Pulse Width | 8 | A |
| Collector Dissipation | TC = 25C per One Chip | 10.3 | W |
| Operating Junction Temperature | -40~150 | C | |
| CONTROL PART (Each IC Unless Otherwise Specified) | |||
| Control Supply Voltage | Applied between VDD and VSS | 20 | V |
| HighSide Control Bias Voltage | Applied between VB and VS | 20 | V |
| Input Signal Voltage | Applied between HIN, LIN and VSS | -0.3~VDD + 0.3 | V |
| BOOTSTRAP DIODE PART (Each Bootstrap Diode Unless Otherwise Specified) | |||
| Maximum Repetitive Reverse Voltage | 600 | V | |
| Forward Current | TC = 25C, TJ < 150C | 0.5 | A |
| Forward Current (Peak) | TC = 25C, TJ < 150C, Under 1 ms Pulse Width | 1.5 | A |
| THERMAL RESISTANCE | |||
| Junction to Case Thermal Resistance | Inverter IGBT Part (per 1/6 Module) | 12.2 | C/W |
| TOTAL SYSTEM | |||
| Short Circuit Withstand Time | VDD = VBS 16.5 V, VPN 400 V, TJ = 150C, Nonrepetitive | 3 | s |
| Storage Temperature | -40~125 | C | |
| Isolation Voltage | 60 Hz, Sinusoidal, AC 1 minute, Connect Pins to Heat Sink Plate | 1500 | Vrms |
2411272251_onsemi-NFA50460R4B_C3615394.pdf
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