power management PIELENST AO4407-L P Channel MOSFET with rugged design and low RDS on characteristics
Product Overview
The AO4407-L is a P-Channel enhancement MOS Field Effect Transistor designed for various power management applications. It features low RDS(on) due to its high-density cell design, fast switching capabilities, and a reliable, rugged construction. This transistor is avalanche rated and offers low leakage current, making it suitable for PWM applications, load switching, power management in portable/desktop PCs, and DC/DC conversion.
Product Attributes
- Material: Halogen free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=25V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-10A | 13.5 | 21 | m | |
| VGS=-4.5V, ID=-7A | 18.5 | 27 | ||||
| Input Capacitance | CISS | VGS=0V VDS =-15V f=1MHz | 1230 | pF | ||
| Output Capacitance | COSS | 160 | pF | |||
| Reverse Transfer Capacitance | CRSS | 145 | pF | |||
| Gate Resistance | Rg | f=1MHZ | 10 | |||
| Total Gate Charge | QG(TOT) | VGS=-10V VDS=-15V ID =-10A | 26.4 | nC | ||
| Gate-to-Source Charge | QGS | 6 | nC | |||
| Gate-to-Drain Charge | QGD | 4.3 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=-10V VDS=-15V RL=1 RG=3 | 18 | ns | ||
| Rise Time | tr | 22 | ns | |||
| Turn-Off Delay Time | td(OFF) | 55 | ns | |||
| Fall Time | tf | 42 | ns | |||
| Forward Voltage | VSD | VGS=0V, ISD=-1.0A | -0.75 | -1 | V | |
| Reverse Recovery Time | trr | VGS=0V, ISD=-10A, di/dt=100A/us | 32 | ns | ||
| Reverse Recovery Charge | Qrr | 28 | nC | |||
2412021443_PIELENST-AO4407-L_C41376493.pdf
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