Dual Schottky barrier diodes onsemi BAS40-04LT1G designed for hand held devices and voltage clamping
Key Attributes
Model Number:
BAS40-04LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
1uA@25V
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
120mA
Mfr. Part #:
BAS40-04LT1G
Package:
SOT-23
Product Description
Product Overview
These dual series Schottky barrier diodes are engineered for high-speed switching, circuit protection, and voltage clamping applications. They offer extremely low forward voltage to minimize conduction losses, making them ideal for space-constrained, hand-held, and portable devices. Available in PbFree, Halogen Free/BFR Free, and RoHS Compliant configurations, with an 'S' prefix for automotive and specific site/control change requirements. AEC Qualified and PPAP Capable.
Product Attributes
- Brand: ON Semiconductor
- Certifications: AEC Qualified, PPAP Capable, PbFree, Halogen Free/BFR Free, RoHS Compliant
- Material: Schottky Barrier Diode
- Application Specific Prefix: S (Automotive and other applications requiring unique site and control change requirements)
Technical Specifications
| Model | Reverse Voltage (VR) | Forward Power Dissipation @ TA = 25C (PF) | Derate above 25C | Operating Junction and Storage Temperature Range (TJ, Tstg) | Forward Continuous Current (IFM) | Single Forward Current (IFSM) (t=1s) | Single Forward Current (IFSM) (t=10ms) | Junction-to-Ambient Thermal Resistance (RJA) (Note 1) | Junction-to-Ambient Thermal Resistance (RJA) (Note 2) | Reverse Breakdown Voltage (V(BR)R) (IR = 10 A) | Total Capacitance (CT) (VR = 1.0 V, f = 1.0 MHz) | Reverse Leakage (IR) (VR = 25 V) | Forward Voltage (VF) (IF = 1.0 mA) | Forward Voltage (VF) (IF = 10 mA) | Forward Voltage (VF) (IF = 40 mA) | Package | Ordering Information |
| BAS40-04LT1G, SBAS40-04LT1G | 40 V | 225 mW | 1.8 mW/C | 55 to +150 C | 120 mA | 200 mA | 600 mA | 508 C/W | 311 C/W | 40 V | 5.0 pF | 1.0 A | 380 mV | 500 mV | 1.0 V | SOT-23 (TO-236) | BAS4004LT1G, SBAS4004LT1G |
2410121952_onsemi-BAS40-04LT1G_C78265.pdf
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