three phase igbt inverter onsemi FSBB15CH60C with integral gate drivers and low loss igbt technology
Key Attributes
Model Number:
FSBB15CH60C
Product Custom Attributes
Mfr. Part #:
FSBB15CH60C
Package:
SPM-CC-027
Product Description
Product Overview
The FSBB15CH60C is an advanced Motion SPM 3 module designed for AC Induction, BLDC, and PMSM motors. It offers a fully-featured, high-performance inverter output stage with optimized gate drive for minimized EMI and losses. Integrated protection features include under-voltage lockouts, over-current shutdown, and fault reporting. The module utilizes a high-speed HVIC requiring a single supply voltage and translates logic-level gate inputs to high-voltage drive signals for the internal IGBTs. Separate negative IGBT terminals facilitate diverse control algorithms.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Certifications: UL Certified No. E209204 (UL1557)
Technical Specifications
| Device | Package | Packing Type | Quantity | Features | Applications |
| FSBB15CH60C | SPMCC-027 | Rail | 10 | 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection; Low-Loss, Short-Circuit Rated IGBTs; Very Low Thermal Resistance Using Al2O3 DBC Substrate; Built-in Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout; Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing; Single-Grounded Power Supply; Isolation Rating: 2500 Vrms / min. | Motion Control - Home Appliance / Industrial Motor |
| Part | Parameter | Conditions | Rating | Unit |
| Inverter Part | Supply Voltage | Applied between P - NU, NV, NW | 450 | V |
| Supply Voltage (Surge) | Applied between P - NU, NV, NW | 500 | V | |
| Collector - Emitter Voltage | 600 | V | ||
| Each IGBT Collector Current | TC = 25C, TJ 150C | 15 | A | |
| Each IGBT Collector Current (Peak) | TC = 25C, TJ 150C, Under 1 ms Pulse Width | 30 | A | |
| Collector Dissipation | TC = 25C per Chip | 55 | W | |
| Operating Junction Temperature | (2nd Note 1) | -40 ~ 150 | C | |
| (at TC 125C) | 150 | C | ||
| Maximum Junction Temperature Rating | 150 | C | ||
| Control Part | Control Supply Voltage | Applied between VCC(H), VCC(L) - COM | 20 | V |
| High-Side Control Bias Voltage | Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) | 20 | V | |
| Input Signal Voltage | Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM | -0.3 ~ VCC + 0.3 | V | |
| Fault Output Supply Voltage | Applied between VFO - COM | -0.3 ~ VCC + 0.3 | V | |
| Fault Output Current Sink Current | at VFO pin | 5 | mA | |
| Bootstrap Diode Part | Maximum Repetitive Reverse Voltage | 600 | V | |
| Forward Current | TC = 25C, TJ 150C | 0.5 | A | |
| Forward Current (Peak) | TC = 25C, TJ 150C Under 1 ms Pulse Width | 2.0 | A | |
| Operating Junction Temperature | 150 | C |
2411272005_onsemi-FSBB15CH60C_C386782.pdf
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