Surface mount silicon diode PJSEMI 1SS355WB featuring fast switching speed and surge current handling

Key Attributes
Model Number: 1SS355WB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
100nA
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
80V
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
1SS355WB
Package:
SOD-323W
Product Description

Product Overview

The 1SS355WB is a Silicon Epitaxial Planar Switching Diode designed for surface mount applications. It offers high-speed switching capabilities with a typical reverse recovery time of 1.2ns and high reliability due to its high surge current handling capability. This diode is suitable for applications requiring fast switching and robust performance.

Product Attributes

  • Brand: Pingjingsemi
  • Material: Silicon
  • Package Type: SOD-323W
  • Marking Code: A

Technical Specifications

ParameterSymbol1SS355WBUnit
Absolute Maximum Ratings
Non-Repetitive Peak Reverse VoltageVRM90V
DC Reverse VoltageVR80V
Peak Forward CurrentIFM225mA
Average Rectified Output CurrentIO100mA
Surge Current (1s)Isurge500mA
Operating TemperatureTJ125C
Storage Temperature RangeTSTG-55 to +125C
Characteristics
Forward Voltage (IF = 100 mA)VF1.2V
Reverse Current (VR = 80 V)IR0.1A
Capacitance Between Terminals (VR = 0.5 V, f = 1 MHz)CT3pF
Reverse Recovery Time (VR = 6 V, IF = 10 mA, RL = 100 )Trr4nS

Package Outline

SOD-323W

DimensionSymbolMinMaxUnitMil
A1.11.4mm4355
A10.080.2mm3.17.9
b0.40.45mm1618
C0.150.25mm5.99.8
D2.752.55mm108100
E1.81.2mm7063
E10.80.4mm3216
L11.4mm5547
9 max

2202211730_PJSEMI-1SS355WB_C2977361.pdf

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