Robust thermowatt package triac onsemi MAC3030-8G designed for heat dissipation in ac control circuits
Key Attributes
Model Number:
MAC3030-8G
Product Custom Attributes
Holding Current (Ih):
6mA
Current - Gate Trigger(Igt):
12mA
Voltage - On State(Vtm):
1.65V
Average Gate Power Dissipation (PG(AV)):
350mW
Current - On State(It(RMS)):
8A
Peak Off - State Voltage(Vdrm):
250V
Current - Surge(Itsm@f):
80A@60Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
900mV
Mfr. Part #:
MAC3030-8G
Package:
TO-220AB
Product Description
Product Overview
The MAC3030-8 is a Triac, a silicon bidirectional thyristor designed for full-wave AC control applications. It is suitable for use in light dimmers, motor controls, heating controls, and power supplies, or wherever full-wave silicon gate-controlled solid-state devices are required. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Key features include blocking voltage up to 250 Volts, all diffused and glass-passivated junctions for enhanced parameter uniformity and stability, and a small, rugged Thermowatt construction for low thermal resistance and high heat dissipation.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Package Type: TO-220AB
- Certifications: PbFree Packages Available
Technical Specifications
| Rating Symbol | Value | Unit | Description |
| VDRM, VRRM | 250 | V | Peak Repetitive OffState Voltage (Note 1) (TJ = 40 to +125C, Sine Wave 50 to 60 Hz, Gate Open) |
| IT(RMS) | 8.0 | A | OnState RMS Current (TC = +70C) Full Cycle Sine Wave 50 to 60 Hz |
| ITSM | 80 | A | Peak NonRepetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25C) Preceded and followed by rated current |
| I2t | 26 | A2s | Circuit Fusing Considerations, (t = 8.3 ms) |
| PGM | 20 | W | Peak Gate Power (TC = +70C, Pulse Width = 10 s) |
| PG(AV) | 0.35 | W | Average Gate Power (TC = +70C, t = 8.3 ms) |
| IGM | 2.0 | A | Peak Gate Current (TC = +70C, Pulse Width = 10 s) |
| TJ | 40 to +125 | C | Operating Junction Temperature Range |
| Tstg | 40 to +150 | C | Storage Temperature Range |
| R JC | 2.0 | C/W | Thermal Resistance JunctiontoCase |
| R JA | 62.5 | C/W | Thermal Resistance JunctiontoAmbient |
| TL | 260 | C | Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds |
| IDRM, IRRM | , | A, mA | Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) (TJ = 25C: , TJ = +125C: 10 A, 2.0 mA) |
| VTM | , 1.65 | V | Peak On-State Voltage (ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%) (Typ, Max) |
| IGT | 12, 12, 20, 35, 50, 50, 50, 75 | mA | Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) (MT2(+), G(+); MT2(+), G(); MT2(), G(); MT2(), G(+)) |
| VGT | 0.9, 0.9, 1.1, 1.4, 2.0, 2.0, 2.0, 2.5 | V | Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 ) (MT2(+), G(+); MT2(+), G(); MT2(), G(); MT2(), G(+)) (Typ, Max) |
| VGD | 0.2 | V | Gate NonTrigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 , TJ = +125C) (All Four Quadrants) |
| IH | , 50 | mA | Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA, TC = +25C) (Typ, Max) |
| tgt | , 1.5 | s | TurnOn Time (Rated VDRM, ITM = 11 A) (IGT = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) (Typ, Max) |
| dv/dt(c) | , 5.0 | V/s | Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = 70C) (Typ) |
| dv/dt | , 100 | V/s | Critical Rate of Rise of OffState Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70C) (Typ) |
2410122031_onsemi-MAC3030-8G_C184145.pdf
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