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quality Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS04R038GF with Low RDS ON and Fast Switching factory
quality Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS04R038GF with Low RDS ON and Fast Switching factory

Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS04R038GF with Low RDS ON and Fast Switching

Key Attributes
Model Number: SFS04R038GF
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
85A
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
64pF
Output Capacitance(Coss):
798pF
Input Capacitance(Ciss):
2.378nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
36.6nC@10V
Mfr. Part #:
SFS04R038GF
Package:
PDFN-8(5x6)
Product Description

Product Overview

The SFS04R038GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, designed using their unique FSMOS technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The low Vth series is optimized for synchronous rectification systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.

Product Attributes

  • Brand: Oriental Semiconductor
  • Product Line: FSMOS MOSFET
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Package Type: PDFN5 6
  • Certifications: Pb Free, RoHS, Halogen Free
  • Marking: SFS04R038GF

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source voltage VDS 40 V
Gate-source voltage VGS 20 V
Continuous drain current, TC=25 C ID 85 A
Pulsed drain current, TC=25 C ID, pulse 255 A
Continuous diode forward current, TC=25 C IS 85 A
Diode pulsed current, TC=25 C IS, pulse 255 A
Power dissipation, TC=25 C PD 65 W
Single pulsed avalanche energy EAS 43 mJ VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 C
Operation and storage temperature Tstg, Tj -55 to 150 C
Thermal resistance, junction-case RJC 1.92 C/W
Thermal resistance, junction-ambient RJA 62 C/W Measured on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C
Drain-source breakdown voltage BVDSS 40 V VGS=0 V, ID=250 A
Gate threshold voltage VGS(th) 1.5 - 2.5 V VDS=VGS, ID=250 A
Drain-source on-state resistance RDS(ON) 3.5 - 3.8 m VGS=10 V, ID=30 A
Drain-source on-state resistance RDS(ON) 5.4 - 7.0 m VGS=4.5 V, ID=30 A
Gate-source leakage current IGSS 100 nA VGS=20 V
Drain-source leakage current IDSS 1 A VDS=40 V, VGS=0 V
Input capacitance Ciss 2378 pF VGS=0 V, VDS=25 V, =100 kHz
Output capacitance Coss 798 pF VGS=0 V, VDS=25 V, =100 kHz
Reverse transfer capacitance Crss 64 pF VGS=0 V, VDS=25 V, =100 kHz
Turn-on delay time td(on) 23 ns VGS=10 V, VDS=20 V, RG=2 , ID=20 A
Rise time tr 6.4 ns VGS=10 V, VDS=20 V, RG=2 , ID=20 A
Turn-off delay time td(off) 51.2 ns VGS=10 V, VDS=20 V, RG=2 , ID=20 A
Fall time tf 9.6 ns VGS=10 V, VDS=20 V, RG=2 , ID=20 A
Total gate charge Qg 36.6 nC VGS=10 V, VDS=20 V, ID=20 A
Gate-source charge Qgs 7.6 nC VGS=10 V, VDS=20 V, ID=20 A
Gate-drain charge Qgd 5.7 nC VGS=10 V, VDS=20 V, ID=20 A
Gate plateau voltage Vplateau 3.3 V VGS=10 V, VDS=20 V, ID=20 A
Diode forward voltage VSD 1.3 V IS=20 A, VGS=0 V
Reverse recovery time trr 51.2 ns VR=20 V, IS=20 A, di/dt=100 A/s
Reverse recovery charge Qrr 31.8 nC VR=20 V, IS=20 A, di/dt=100 A/s
Peak reverse recovery current Irrm 1.2 A VR=20 V, IS=20 A, di/dt=100 A/s
Package Dimensions (mm)
PDFN5 6-P A: 1.00-1.20, b: 0.30-0.50, c: 0.154-0.354, D1: 5.00-5.40, D2: 3.80-4.25, e: 1.17-1.37, E1: 5.95-6.35, E2: 5.66-6.06, E4: 3.52-3.92, H: 0.40-0.60, L: 0.30-0.70, K: 1.15-1.45
Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box
PDFN5 6-P 5000 2 10000 5 50000

2508181758_ORIENTAL-SEMI-SFS04R038GF_C49005838.pdf

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