Switching MOSFET ORIENTAL SEMI OSG65R900DTF Featuring Low On Resistance and High Avalanche Capability
Key Attributes
Model Number:
OSG65R900DTF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
900mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
2.9V
Reverse Transfer Capacitance (Crss@Vds):
1.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
32W
Gate Charge(Qg):
7.1nC@10V
Mfr. Part #:
OSG65R900DTF
Package:
TO-252
Product Description
Product Overview
The Oriental Semiconductor GreenMOS OSG65R900DTF is an N-Channel Power MOSFET designed for high-efficiency applications. Utilizing charge balance technology, it offers outstanding low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET is engineered for superior switching performance, robust avalanche capability, and high power density, making it ideal for demanding applications such as PC power supplies, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Series: GreenMOS Generic
- Technology: Charge Balance Technology
- Material: Not Specified
- Color: Not Specified
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS, min @ Tj(max) | 700 | V | |
| Pulse drain current | ID, pulse | 13.5 | A | |
| On-resistance (max @ VGS=10V) | RDS(ON), max @ VGS=10V | 0.9 | m | |
| Total gate charge | Qg | 7.1 | nC | |
| Drain-source voltage | VDS | 650 | V | Tj=25C unless otherwise noted |
| Gate-source voltage | VGS | 30 | V | Tj=25C unless otherwise noted |
| Continuous drain current (TC=25 C) | ID | 4.5 | A | Tj=25C unless otherwise noted |
| Continuous drain current (TC=100 C) | ID | 2.8 | A | Tj=25C unless otherwise noted |
| Pulsed drain current (TC=25 C) | ID, pulse | 13.5 | A | Tj=25C unless otherwise noted |
| Continuous diode forward current (TC=25 C) | IS | 4.5 | A | Tj=25C unless otherwise noted |
| Diode pulsed current (TC=25 C) | IS, pulse | 13.5 | A | Tj=25C unless otherwise noted |
| Power dissipation (TC=25 C) | PD | 32 | W | Tj=25C unless otherwise noted |
| Single pulsed avalanche energy (EAS) | EAS | 50 | mJ | Tj=25C unless otherwise noted |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V, Tj=25C unless otherwise noted |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID, Tj=25C unless otherwise noted |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 3.9 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 2.9 - 3.9 | V | VDS=VGS, ID=250 A |
| Drain-source on- state resistance | RDS(ON) | 0.75 - 0.9 | VGS=10 V, ID=2 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=650 V, VGS=0 V |
| Input capacitance | Ciss | 324.1 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output capacitance | Coss | 30.1 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Reverse transfer capacitance | Crss | 1.6 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Turn-on delay time | td(on) | 22.8 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=2 A |
| Rise time | tr | 11.5 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=2 A |
| Turn-off delay time | td(off) | 48.7 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=2 A |
| Fall time | tf | 14.9 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=2 A |
| Total gate charge | Qg | 7.1 | nC | VGS=10 V, VDS=400 V, ID=2 A |
| Gate-source charge | Qgs | 1.5 | nC | VGS=10 V, VDS=400 V, ID=2 A |
| Gate-drain charge | Qgd | 3.5 | nC | VGS=10 V, VDS=400 V, ID=2 A |
| Gate plateau voltage | Vplateau | 5.8 | V | VGS=10 V, VDS=400 V, ID=2 A |
| Diode forward voltage | VSD | 1.3 | V | IS=4.5 A, VGS=0 V |
| Reverse recovery time | trr | 147 | ns | VR=400 V, IS=2 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 0.92 | C | VR=400 V, IS=2 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 12.4 | A | VR=400 V, IS=2 A, di/dt=100 A/s |
| Product Name | OSG65R900DTF | |||
| Package Marking | OSG65R900DT | |||
| Package Type | TO252-J | |||
| Units/Reel | 2500 | |||
| Reels/Inner Box | 2 | |||
| Units/Inner Box | 5000 | |||
| Inner Boxes/Carton Box | 5 | |||
| Units/Carton Box | 25000 |
2409300634_ORIENTAL-SEMI-OSG65R900DTF_C708900.pdf
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