PJM4602DNSG S PJSEMI Dual N Channel MOSFET suitable for load switching and power management circuits
Key Attributes
Model Number:
PJM4602DNSG-S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
27pF
Number:
2 N-Channel
Input Capacitance(Ciss):
260pF@10V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
5nC
Mfr. Part #:
PJM4602DNSG-S
Package:
SOT-23-6
Product Description
Product Overview
The PJM4602DNSG-S is a Dual N-Channel MOSFET designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on), providing high power and current handling capabilities. This MOSFET is ideal for battery protection, load switching, and general power management circuits.
Product Attributes
- Brand: PingJingSemi
- Model: PJM4602DNSG-S
- Revision: 1.0
- Date: Apr-2020
- Marking Code: DS02
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 20 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.4 | 0.8 | 1.2 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=1A | - | 60 | 80 | m |
| VGS=4.5V, ID=2A | - | 48 | 60 | m | ||
| Forward Transconductance | gFS | VDS=5V,ID=2A | - | 5 | - | S |
| Input Capacitance | Clss | VDS=10V,VGS=0V, f=1.0MHz | - | 260 | - | pF |
| Output Capacitance | Coss | VDS=10V,VGS=0V, f=1.0MHz | - | 48 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V, f=1.0MHz | - | 27 | - | pF |
| Turn-on Delay Time | td(on) | VDD=10V, RL=3.3, VGS=4.5V,RGEN=6 | - | 2.5 | - | nS |
| Turn-on Rise Time | tr | VDD=10V, RL=3.3, VGS=4.5V,RGEN=6 | - | 3.2 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=10V, RL=3.3, VGS=4.5V,RGEN=6 | - | 21 | - | nS |
| Turn-Off Fall Time | tf | VDD=10V, RL=3.3, VGS=4.5V,RGEN=6 | - | 3 | - | nS |
| Total Gate Charge | Qg | VDS=10V,ID=2A, VGS=4.5V | - | 2.9 | 5 | nC |
| Gate-Source Charge | Qgs | VDS=10V,ID=2A, VGS=4.5V | - | 0.4 | - | nC |
| Gate-Drain Charge | Qg | VDS=10V,ID=2A, VGS=4.5V | - | 0.6 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=2A | - | - | 1.2 | V |
| Diode Forward Current | IS | VGS=0V, VSD=1.2V | - | - | 2 | A |
| Drain-Source Voltage | VDS | Absolute Maximum Ratings | - | - | 20 | V |
| Gate-Source Voltage | VGS | Absolute Maximum Ratings | - | - | 12 | V |
| Drain Current-Continuous | ID | Absolute Maximum Ratings | - | - | 2 | A |
| Drain Current-Pulsed | IDM | Absolute Maximum Ratings (Note1) | - | - | 10 | A |
| Maximum Power Dissipation | PD | Absolute Maximum Ratings (Note2) | - | - | 1 | W |
| Thermal Resistance, Junction-to-Ambient | RJA | Absolute Maximum Ratings (Note2) | - | 125 | - | /W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | Absolute Maximum Ratings | -55 | - | 150 |
2410010403_PJSEMI-PJM4602DNSG-S_C2944132.pdf
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