High Voltage Enhancement Mode MOSFET ORIENTAL SEMI OSG65R260FSF for Solar UPS and Telecom Power Applications
Key Attributes
Model Number:
OSG65R260FSF
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
15A
RDS(on):
220mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.9V
Reverse Transfer Capacitance (Crss@Vds):
7.1pF
Output Capacitance(Coss):
100.2pF
Input Capacitance(Ciss):
1.227nF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
26.4nC@10V
Mfr. Part #:
OSG65R260FSF
Package:
TO-220F
Product Description
Product Overview
The OSG65R260FSF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS S series. This high voltage MOSFET utilizes charge balance technology to deliver outstanding low on-resistance and reduced gate charge, minimizing conduction loss and enhancing switching performance. Optimized for aggressive EMI standards, it is designed for ease of use in smaller power supply systems, meeting both efficiency and EMI requirements. Key applications include LED lighting, chargers, adapters, telecom power, server power, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS S series
- Technology: Charge Balance Technology
- Material: Not specified
- Color: Not specified
- Certifications: Pb Free, RoHS, Halogen Free
- Package Type: TO220F-J
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | |
|---|---|---|---|---|---|
| Key Performance Parameters | |||||
| VDS, min @ Tj(max) | 700 | V | |||
| ID, pulse | 45 | A | |||
| RDS(ON), max @ VGS=10V | 260 | m | |||
| Qg | 26.4 | nC | |||
| Absolute Maximum Ratings | |||||
| Drain-source voltage | VDS | 650 | V | Tj=25C unless otherwise noted | |
| Gate-source voltage | VGS | 30 | V | Tj=25C unless otherwise noted | |
| Continuous drain current, TC=25 C | ID | 15 | A | Tj=25C unless otherwise noted | |
| Continuous drain current, TC=100 C | ID | 9.5 | A | Tj=25C unless otherwise noted | |
| Pulsed drain current, TC=25 C | ID, pulse | 45 | A | Tj=25C unless otherwise noted | |
| Continuous diode forward current, TC=25 C | IS | 15 | A | Tj=25C unless otherwise noted | |
| Diode pulsed current, TC=25 C | IS, pulse | 45 | A | Tj=25C unless otherwise noted | |
| Power dissipation, TC=25 C | PD | 33 | W | Tj=25C unless otherwise noted | |
| Single pulsed avalanche energy | EAS | 360 | mJ | Tj=25C unless otherwise noted | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V | |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID | |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | ||
| Thermal Characteristics | |||||
| Thermal resistance, junction-case | RJC | 3.8 | C/W | ||
| Thermal resistance, junction-ambient | RJA | 62.5 | C/W | Measured with device mounted on 1 in FR-4 board with 2oz. Copper, still air environment, Ta=25 C | |
| Electrical Characteristics | |||||
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 A | |
| Drain-source breakdown voltage | BVDSS | 700 | V | VGS=0 V, ID=250 A, Tj=150 C | |
| Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 0.22 | 0.26 | VGS=10 V, ID=7.5 A | |
| Drain-source on-state resistance | RDS(ON) | 0.54 | VGS=10 V, ID=7.5 A, Tj=150 C | ||
| Gate-source leakage current | IGSS | 100 | nA | VDS=650 V, VGS=0 V | |
| Gate-source leakage current | IGSS | -100 | nA | VGS=-30 V | |
| Drain-source leakage current | IDSS | 1 | A | VDS=650 V, VGS=0 V | |
| Gate resistance | RG | 8.3 | =1 MHz, Open drain | ||
| Dynamic Characteristics | |||||
| Input capacitance | Ciss | 1227 | pF | VGS=0 V, VDS=50 V, =100 kHz | |
| Output capacitance | Coss | 100.2 | pF | VGS=0 V, VDS=50 V, =100 kHz | |
| Reverse transfer capacitance | Crss | 7.1 | pF | VGS=0 V, VDS=50 V, =100 kHz | |
| Turn-on delay time | td(on) | 24.7 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=8 A | |
| Rise time | tr | 7.3 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=8 A | |
| Turn-off delay time | td(off) | 56.3 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=8 A | |
| Fall time | tf | 9.5 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=8 A | |
| Gate Charge Characteristics | |||||
| Total gate charge | Qg | 26.4 | nC | VGS=10 V, VDS=400 V, ID=8 A | |
| Gate-source charge | Qgs | 7.8 | nC | VGS=10 V, VDS=400 V, ID=8 A | |
| Gate-drain charge | Qgd | 7.9 | nC | VGS=10 V, VDS=400 V, ID=8 A | |
| Gate plateau voltage | Vplateau | 5.3 | V | VGS=10 V, VDS=400 V, ID=8 A | |
| Body Diode Characteristics | |||||
| Diode forward voltage | VSD | 1.4 | V | IS=15 A, VGS=0 V | |
| Reverse recovery time | trr | 292 | ns | VR=400 V, IS=8 A, di/dt=100 A/s | |
| Reverse recovery charge | Qrr | 3.5 | C | VR=400 V, IS=8 A, di/dt=100 A/s | |
| Peak reverse recovery current | Irrm | 21.8 | A | VR=400 V, IS=8 A, di/dt=100 A/s | |
| Package & Pin Information | |||||
| Product Name | OSG65R260FSF | TO220F | |||
| Package Marking | OSG65R260FSF | TO220F | |||
| Package Outline Dimensions (TO220F-J) | |||||
| Symbol | mm Min | mm Nom | mm Max | ||
| A | 4.50 | 4.70 | 4.83 | ||
| A1 | 2.34 | 2.54 | 2.74 | ||
| A2 | 0.70 | REF | |||
| A3 | 2.56 | 2.76 | 2.93 | ||
| b | 0.70 | - | 0.90 | ||
| b1 | 1.18 | - | 1.38 | ||
| b2 | - | - | 1.47 | ||
| c | 0.45 | 0.50 | 0.60 | ||
| D | 15.67 | 15.87 | 16.07 | ||
| D1 | 15.55 | 15.75 | 15.95 | ||
| D2 | 9.60 | 9.80 | 10.00 | ||
| E | 9.96 | 10.16 | 10.36 | ||
| e | 2.54 BSC | ||||
| H1 | 6.48 | 6.68 | 6.88 | ||
| L | 12.68 | 12.98 | 13.28 | ||
| L1 | - | - | 3.50 | ||
| L2 | 6.50 REF | ||||
| P | 3.08 | 3.18 | 3.28 | ||
| Q | 3.20 | - | 3.40 | ||
| 1 | 3 | 5 | |||
| Ordering Information | |||||
| Package Type | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Boxes/Carton Box | Units/Carton Box |
| TO220F-J | 50 | 20 | 1000 | 5 | 5000 |
2508181758_ORIENTAL-SEMI-OSG65R260FSF_C49005831.pdf
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