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quality Power MOSFET ORIENTAL SEMI OSG70R600FF Featuring Charge Balance Technology for Switching Performance factory
quality Power MOSFET ORIENTAL SEMI OSG70R600FF Featuring Charge Balance Technology for Switching Performance factory

Power MOSFET ORIENTAL SEMI OSG70R600FF Featuring Charge Balance Technology for Switching Performance

Key Attributes
Model Number: OSG70R600FF
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.9V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Number:
-
Output Capacitance(Coss):
40.1pF
Input Capacitance(Ciss):
587.1pF
Pd - Power Dissipation:
28W
Gate Charge(Qg):
12.2nC@10V
Mfr. Part #:
OSG70R600FF
Package:
TO-220F
Product Description

Product Overview

The OSG70R600FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. It leverages charge balance technology for exceptional low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET is engineered for superior switching performance and robust avalanche capability, making it ideal for high power density applications demanding the highest efficiency standards. Key applications include PC power supplies, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.

Product Attributes

  • Brand: Oriental Semiconductor
  • Product Series: GreenMOS Generic
  • Technology: Charge Balance Technology
  • Package Type: TO220F-C
  • Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source voltage (min @ Tj(max)) VDS 750 V Tj(max)
Pulse drain current ID, pulse 24 A TC=25 C
RDS(ON) (max @ VGS=10V) RDS(ON) 600 m VGS=10V
Total gate charge Qg 12.2 nC VGS=10 V, VDS=400 V, ID=4 A
Drain-source breakdown voltage BVDSS 700 V VGS=0 V, ID=250 A
Gate threshold voltage VGS(th) 2.9 - 3.9 V VDS=VGS, ID=250 A
Drain-source on- state resistance RDS(ON) 0.53 - 0.60 VGS=10 V, ID=4 A
Continuous drain current ID 8 A TC=25 C
Continuous drain current ID 5 A TC=100 C
Continuous diode forward current IS 8 A TC=25 C
Power dissipation PD 28 W TC=25 C
Single pulsed avalanche energy EAS 130 mJ VDD=100 V, VGS=10 V, L=40 mH, starting Tj=25 C
Thermal resistance, junction-case RJC 4.46 C/W -
Thermal resistance, junction-ambient RJA 62.5 C/W Mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 C
Input capacitance Ciss 587.1 pF VGS=0 V, VDS=50 V, =1 MHz
Output capacitance Coss 40.1 pF VGS=0 V, VDS=50 V, =1 MHz
Reverse transfer capacitance Crss 1.4 pF VGS=0 V, VDS=50 V, =1 MHz
Turn-on delay time td(on) 30.3 ns VGS=10 V, VDS=400 V, RG=2 , ID=4 A
Rise time tr 16.4 ns VGS=10 V, VDS=400 V, RG=2 , ID=4 A
Turn-off delay time td(off) 59.9 ns VGS=10 V, VDS=400 V, RG=2 , ID=4 A
Fall time tf 7.1 ns VGS=10 V, VDS=400 V, RG=2 , ID=4 A
Total gate charge Qg 12.2 nC VGS=10 V, VDS=400 V, ID=4 A
Gate-source charge Qgs 2.9 nC VGS=10 V, VDS=400 V, ID=4 A
Gate-drain charge Qgd 4.9 nC VGS=10 V, VDS=400 V, ID=4 A
Gate plateau voltage Vplateau 5.7 V VGS=10 V, VDS=400 V, ID=4 A
Diode forward voltage VSD 1.3 V IS=8 A, VGS=0 V
Reverse recovery time trr 190.8 ns VR=400 V, IS=4 A, di/dt=100 A/s
Reverse recovery charge Qrr 1.9 C VR=400 V, IS=4 A, di/dt=100 A/s
Peak reverse recovery current Irrm 21.9 A VR=400 V, IS=4 A, di/dt=100 A/s
Product Name - OSG70R600FF - TO220F
Package Marking - OSG70R600F - TO220F

Package Outline Dimensions (TO220F-C):

Symbol mm (Min) mm (Nom) mm (Max)
E 9.96 10.16 10.36
A 4.50 4.70 4.90
A1 2.34 2.54 2.74
A4 2.56 2.76 2.96
c 0.40 0.50 0.65
D 15.57 15.87 16.17
H1 6.70 (REF) - -
e - 2.54 (BSC) -
L 12.68 12.98 13.28
L1 2.88 3.03 3.18
P 3.03 3.18 3.38
P3 3.15 3.45 3.65
F3 3.15 3.30 3.45
G3 1.25 1.35 1.55
b1 1.18 1.28 1.43
b2 0.70 0.80 0.95

Ordering Information:

Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box
TO220F-C 50 20 1000 6 6000

2411220230_ORIENTAL-SEMI-OSG70R600FF_C2762906.pdf

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