High Current N Channel MOSFET ORIENTAL SEMI SFS06R06DF with Low Gate Charge and Fast Switching Speed
Key Attributes
Model Number:
SFS06R06DF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10.6pF@50V
Number:
-
Input Capacitance(Ciss):
2.136nF
Pd - Power Dissipation:
87W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SFS06R06DF
Package:
TO-252
Product Description
Product Overview
The SFS06R06DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, engineered with advanced device design for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage. It offers superior performance with extremely low switching loss and excellent reliability, making it ideal for applications such as PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: FSMOS MOSFET
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package Type: TO252-J
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Key Performance Parameters | ||||
| Drain-Source Voltage (min @ Tj(max)) | VDS | 60 | V | Tj(max) |
| Pulsed Drain Current | ID, pulse | 210 | A | |
| RDS(ON) max @ VGS=10V | RDS(ON) | 6 | m | VGS=10V |
| Total Gate Charge | Qg | 30 | nC | |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 60 | V | Tj=25C unless otherwise noted |
| Gate-Source Voltage | VGS | 20 | V | Tj=25C unless otherwise noted |
| Continuous Drain Current (TC=25C) | ID | 70 | A | TC=25C |
| Pulsed Drain Current (TC=25C) | ID, pulse | 210 | A | TC=25C |
| Continuous Diode Forward Current (TC=25C) | IS | 70 | A | TC=25C |
| Diode Pulsed Current (TC=25C) | IS, Pulse | 210 | A | TC=25C |
| Power Dissipation (TC=25C) | PD | 87 | W | TC=25C |
| Single Pulsed Avalanche Energy | EAS | 66 | mJ | |
| Operation and Storage Temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-Case | RJC | 1.44 | C/W | |
| Thermal Resistance, Junction-Ambient | RJA | 62 | C/W | |
| Electrical Characteristics (Tj=25C unless otherwise specified) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0 V, ID=250 A |
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.5 | V | VDS=VGS, ID=250 A |
| Drain-Source On-State Resistance | RDS(ON) | 4.7 - 6 | m | VGS=10 V, ID=20 A |
| Drain-Source On-State Resistance | RDS(ON) | 6.4 - 10 | m | VGS=4.5 V, ID=10 A |
| Gate-Source Leakage Current | IGSS | -100 - 100 | nA | VGS=20 V |
| Drain-Source Leakage Current | IDSS | 1 | A | VDS=60 V, VGS=0 V |
| Gate Resistance | RG | 2.8 | =1 MHz, Open drain | |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 2136 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output Capacitance | Coss | 332 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Reverse Transfer Capacitance | Crss | 10.6 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Turn-on Delay Time | td(on) | 22.9 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Rise Time | tr | 6.5 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Turn-off Delay Time | td(off) | 45.7 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Fall Time | tf | 20.4 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Gate Charge Characteristics | ||||
| Total Gate Charge | Qg | 30 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate-Source Charge | Qgs | 5.8 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate-Drain Charge | Qgd | 6.1 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate Plateau Voltage | Vplateau | 3.6 | V | VGS=10 V, VDS=50 V, ID=25 A |
| Body Diode Characteristics | ||||
| Diode Forward Voltage | VSD | 1.3 | V | IS=20 A, VGS=0 V |
| Reverse Recovery Time | trr | 50.3 | ns | VR=50 V, IS=25 A, di/dt=100 A/s |
| Reverse Recovery Charge | Qrr | 45.1 | nC | VR=50 V, IS=25 A, di/dt=100 A/s |
| Peak Reverse Recovery Current | Irrm | 1.5 | A | VR=50 V, IS=25 A, di/dt=100 A/s |
| Package Dimensions (TO252-J) | ||||
| Dimension A | 2.20 - 2.38 | mm | ||
| Dimension A1 | 0.00 - 0.10 | mm | ||
| Dimension A2 | 0.90 - 1.10 | mm | ||
| Dimension b | 0.72 - 0.85 | mm | ||
| Dimension b1 | 0.71 - 0.81 | mm | ||
| Dimension b2 | 0.72 - 0.90 | mm | ||
| Dimension b3 | 5.13 - 5.46 | mm | ||
| Dimension c | 0.47 - 0.60 | mm | ||
| Dimension c1 | 0.46 - 0.56 | mm | ||
| Dimension c2 | 0.47 - 0.60 | mm | ||
| Dimension D | 6.00 - 6.20 | mm | ||
| Dimension D1 | 5.25 | mm | ||
| Dimension E | 6.50 - 6.70 | mm | ||
| Dimension E1 | 4.70 | mm | ||
| Dimension e | 2.186 - 2.386 | mm | ||
| Dimension H | 9.80 - 10.40 | mm | ||
| Dimension L | 1.40 - 1.70 | mm | ||
| Dimension L1 | 2.90 | mm | REF | |
| Dimension L2 | 0.508 | mm | BSC | |
| Dimension L3 | 0.90 - 1.25 | mm | ||
| Dimension L4 | 0.60 - 1.00 | mm | ||
| Dimension L5 | 0.15 - 0.75 | mm | ||
| Dimension L6 | 1.80 | mm | REF | |
| Dimension | 0 - 8 | |||
| Dimension 1 | 5 - 9 | |||
| Dimension 2 | 5 - 9 | |||
| Ordering Information | ||||
| Package Type | TO252-J | |||
| Units/Reel | 2500 | |||
| Reels/Inner Box | 2 | |||
| Units/Inner Box | 5000 | |||
| Inner Boxes/Carton Box | 5 | |||
| Units/Carton Box | 25000 | |||
2410121713_ORIENTAL-SEMI-SFS06R06DF_C2762914.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
