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quality Low RDSon Power MOSFET ORIENTAL SEMI OSG65R290FEF Ideal for Lighting Server Power Supply and Charger Applications factory
quality Low RDSon Power MOSFET ORIENTAL SEMI OSG65R290FEF Ideal for Lighting Server Power Supply and Charger Applications factory

Low RDSon Power MOSFET ORIENTAL SEMI OSG65R290FEF Ideal for Lighting Server Power Supply and Charger Applications

Key Attributes
Model Number: OSG65R290FEF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.7V
Reverse Transfer Capacitance (Crss@Vds):
2.1pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
32W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
OSG65R290FEF
Package:
TO-220F
Product Description

Product Overview

The OSG65R290xEF series are Enhancement Mode N-Channel Power MOSFETs from Oriental Semiconductor, designed with advanced GreenMOSTM technology. These MOSFETs offer low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics. They are ideal for applications requiring low RDS(on) and FOM, extremely low switching loss, excellent stability and uniformity, and ease of driving. Key applications include lighting, server power supplies, and chargers, where a balanced approach to EMI and performance is crucial.

Product Attributes

  • Brand: Oriental Semiconductor
  • Technology: GreenMOSTM
  • Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Model Package VDS (V) ID (A) RDS(ON) (m) Qg (nC) Applications
OSG65R290FEF TO220F 650 15 290 (max @ VGS=10V) 21 Lighting, Server power supply, Charger
OSG65R290DEF TO252 650 15 290 (max @ VGS=10V) 21 Lighting, Server power supply, Charger
OSG65R290KEF TO263 650 15 290 (max @ VGS=10V) 21 Lighting, Server power supply, Charger

Technical Data Summary

Parameter Symbol Value Unit Condition
Absolute Maximum Ratings
Drain-source voltage VDS 650 V Tj=25
Gate-source voltage VGS 30 V
Continuous drain current ID 15 A TC=25
Continuous drain current ID 9.5 A TC=100
Pulsed drain current ID, pulse 45 A TC=25
Diode forward current IS 15 A
Pulsed source current ISP 45 A
Power dissipation (TO252/TO263) PD 104 W TC=25
Power dissipation (TO220F) PD 32 W TC=25
Single pulsed avalanche energy EAS 250 mJ
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0480 V
Reverse diode dv/dt dv/dt 15 V/ns VDS=0480 V, ISDID
Operation and storage temperature TstgTj -55 to 150
Electrical Characteristics
Drain-source breakdown voltage BVDSS 650 V VGS=0 V, ID=250 A
Drain-source breakdown voltage BVDSS 700 V VGS=0 V, ID=250 A, Tj=150
Gate threshold voltage VGS(th) 2.7 - 3.7 V VDS=VGS, ID=250 A
Drain-source on-state resistance RDS(ON) 0.25 - 0.29 VGS=10 V, ID=7.5 A
Drain-source on-state resistance RDS(ON) 0.68 VGS=10 V, ID=7.5 A, Tj=150
Gate-source leakage current IGSS 100 nA VGS=30 V
Drain-source leakage current IDSS 1 A VDS=650 V, VGS=0 V
Dynamic Characteristics
Input capacitance Ciss 1079 pF VGS=0 V, VDS=50 V, =100 kHz
Output capacitance Coss 74.1 pF VGS=0 V, VDS=50 V, =100 kHz
Reverse transfer capacitance Crss 2.1 pF VGS=0 V, VDS=50 V, =100 kHz
Turn-on delay time td(on) 30.1 ns VGS=10 V, VDS=400 V, RG=2 , ID=8 A
Rise time tr 19.5 ns VGS=10 V, VDS=400 V, RG=2 , ID=8 A
Turn-off delay time td(off) 61.5 ns VGS=10 V, VDS=400 V, RG=2 , ID=8 A
Fall time tf 15.5 ns VGS=10 V, VDS=400 V, RG=2 , ID=8 A
Gate Charge Characteristics
Total gate charge Qg 21.0 nC ID=8 A, VDS=400 V, VGS=10 V
Gate-source charge Qgs 5.0 nC ID=8 A, VDS=400 V, VGS=10 V
Gate-drain charge Qgd 7.4 nC ID=8 A, VDS=400 V, VGS=10 V
Gate plateau voltage Vplateau 5.5 V ID=8 A, VDS=400 V, VGS=10 V
Body Diode Characteristics
Diode forward current IS 15 A VGS
Pulsed source current ISP 45 A
Diode forward voltage VSD 1.3 V IS=15 A, VGS=0 V
Reverse recovery time trr 262.4 ns VR=400 V, IS=8 A, di/dt=100 A/s
Reverse recovery charge Qrr 2.9 C VR=400 V, IS=8 A, di/dt=100 A/s
Peak reverse recovery current Irrm 23.4 A VR=400 V, IS=8 A, di/dt=100 A/s

Package Information

Package Type Outline Dimensions (mm) Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box
TO220F (See Figure 1) 50 20 1000 6 6000
TO252 (See Figure 2) 2500 2 5000 5 25000
TO263 (See Figure 3) 800 1 800 10 8000

Note: Detailed package outline dimensions are available in the figures referenced in the Package Information section.


2410121532_ORIENTAL-SEMI-OSG65R290FEF_C708897.pdf

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