N channel Power MOSFET ORIENTAL SEMI OSG65R900DEF engineered for performance in LED lighting and telecom power
Key Attributes
Model Number:
OSG65R900DEF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
5A
RDS(on):
900mΩ@10V,2.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.9V
Reverse Transfer Capacitance (Crss@Vds):
1.4pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
408pF
Pd - Power Dissipation:
37W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
OSG65R900DEF
Package:
TO-252
Product Description
Product Overview
The Oriental Semiconductor GreenMOS OSG65R900DEF is a high-voltage N-Channel Power MOSFET engineered with charge balance technology. This design achieves outstanding low on-resistance and reduced gate charge, minimizing conduction loss and enhancing switching performance with robust avalanche capability. The GreenMOS E series is optimized for balanced switching characteristics, offering a compromise between EMI and efficiency. It is designed to enable power supply systems to reach high efficiency levels while meeting EMI standards. Ideal applications include LED lighting, chargers, adapters, TV power, telecom power, server power, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS
- Technology: Charge Balance Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Certifications: Pb Free, RoHS, Halogen Free
- Origin: Oriental Semiconductor (implied by branding)
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS, min @ Tj(max) | 700 | V | |
| Pulse Drain Current | ID, pulse | 15 | A | |
| RDS(ON) (max @ VGS=10V) | RDS(ON), max @ VGS=10V | 0.9 | m | |
| Total Gate Charge | Qg | 9.0 | nC | |
| Drain-source voltage | VDS | 650 | V | Tj=25C |
| Gate-source voltage | VGS | 30 | V | Tj=25C |
| Continuous drain current (TC=25 C) | ID | 5 | A | TC=25 C |
| Continuous drain current (TC=100 C) | ID | 3.2 | A | TC=100 C |
| Pulsed drain current (TC=25 C) | ID, pulse | 15 | A | TC=25 C |
| Continuous diode forward current (TC=25 C) | IS | 5 | A | TC=25 C |
| Diode pulsed current (TC=25 C) | IS, pulse | 15 | A | TC=25 C |
| Power dissipation (TC=25 C) | PD | 37 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 130 | mJ | VDD=50 V, VGS=10 V, L=20 mH, starting Tj=25 C |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 3.4 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Device mounted on 1 in FR-4 board with 2oz. Copper, still air environment, Ta=25 C |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 A |
| Drain-source breakdown voltage (Tj=150 C) | BVDSS | 700-770 | V | VGS=0 V, ID=250 A, Tj=150 C |
| Gate threshold voltage | VGS(th) | 2.9 - 3.9 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 0.8 - 0.9 | VGS=10 V, ID=2.5 A | |
| Drain-source on-state resistance (Tj=150 C) | RDS(ON) | 2.3 | VGS=10 V, ID=2.5 A, Tj=150 C | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=650 V, VGS=0 V |
| Input capacitance | Ciss | 408.0 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Output capacitance | Coss | 30.3 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Reverse transfer capacitance | Crss | 1.4 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Turn-on delay time | td(on) | 27.4 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=2.5 A |
| Rise time | tr | 12.6 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=2.5 A |
| Turn-off delay time | td(off) | 52.2 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=2.5 A |
| Fall time | tf | 7.6 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=2.5 A |
| Total gate charge | Qg | 9.0 | nC | VGS=10 V, VDS=400 V, ID=2.5 A |
| Gate-source charge | Qgs | 2.0 | nC | VGS=10 V, VDS=400 V, ID=2.5 A |
| Gate-drain charge | Qgd | 3.8 | nC | VGS=10 V, VDS=400 V, ID=2.5 A |
| Gate plateau voltage | Vplateau | 5.6 | V | VGS=10 V, VDS=400 V, ID=2.5 A |
| Diode forward voltage | VSD | 1.3 | V | IS=5 A, VGS=0 V |
| Reverse recovery time | trr | 146.6 | ns | VR=400 V, IS=2.5 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 1.1 | C | VR=400 V, IS=2.5 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 15.5 | A | VR=400 V, IS=2.5 A, di/dt=100 A/s |
| Product Name | OSG65R900DEF | |||
| Package Marking | OSG65R900DE | TO252 | ||
| Package Type | TO252-C, TO252-J | |||
| Units/Reel (TO252-C) | 2500 | Units | ||
| Reels/Inner Box (TO252-C) | 2 | |||
| Units/Inner Box (TO252-C) | 5000 | Units | ||
| Inner Boxes/Carton Box (TO252-C) | 5 | |||
| Units/Carton Box (TO252-C) | 25000 | Units | ||
| Units/Reel (TO252-J) | 2500 | Units | ||
| Reels/Inner Box (TO252-J) | 2 | |||
| Units/Inner Box (TO252-J) | 5000 | Units | ||
| Inner Boxes/Carton Box (TO252-J) | 5 | |||
| Units/Carton Box (TO252-J) | 25000 | Units |
2411220127_ORIENTAL-SEMI-OSG65R900DEF_C5175406.pdf
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