load switching and PWM control with PJSEMI PJMG10P60SQ P Channel Enhancement Mode Power MOSFET component
Key Attributes
Model Number:
PJMG10P60SQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
10A
RDS(on):
110mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 P-Channel
Output Capacitance(Coss):
135pF
Input Capacitance(Ciss):
515pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
9.86nC@4.5V
Mfr. Part #:
PJMG10P60SQ
Package:
SOT-89
Product Description
Product Overview
The PJMG10P60SQ is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Split Gate Trench Technology. It offers high performance with a low on-resistance and is designed for applications such as load switching, PWM applications, and power management. This component is RoHS and Reach Compliant, and Halogen and Antimony Free.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS, Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-48V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250A | 1 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V,ID=-8A | -- | 60 | 75 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V,ID=-8A | -- | 80 | 110 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-1A | -- | 4.5 | -- | S |
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 515 | -- | pF |
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 135 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 12 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 3 | -- | |
| Total Gate Charge | Qg | VDS=-48V,ID=-10A,VGS=-4.5V | -- | 9.86 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-48V,ID=-10A,VGS=-4.5V | -- | 3.08 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=-48V,ID=-10A,VGS=-4.5V | -- | 2.95 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=-15V,ID=-1A, VGS=-10V,RGEN=3.3 | -- | 28.8 | -- | nS |
| Turn-on Rise Time | tr | VDD=-15V,ID=-1A, VGS=-10V,RGEN=3.3 | -- | 19.8 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-15V,ID=-1A, VGS=-10V,RGEN=3.3 | -- | 60.8 | -- | nS |
| Turn-off Fall Time | tf | VDD=-15V,ID=-1A, VGS=-10V,RGEN=3.3 | -- | 7.2 | -- | nS |
| Diode Forward Voltage | -VSD | VGS=0V,IS=-10A | -- | -- | 1.4 | V |
| Diode Forward Current | -IS | VGS=0V,IS=-10A | -- | -- | 10 | A |
2411191726_PJSEMI-PJMG10P60SQ_C42388541.pdf
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