Low On Resistance and Reduced Gate Charge ORIENTAL SEMI OSG80R1K4DF Enhancement Mode N Channel MOSFET
Key Attributes
Model Number:
OSG80R1K4DF
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.1Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
1.35pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
363.5pF@50V
Pd - Power Dissipation:
37W
Gate Charge(Qg):
7.5nC@10V
Mfr. Part #:
OSG80R1K4DF
Package:
TO-252
Product Description
Product Overview
The OSG80R1K4DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. Utilizing charge balance technology, it delivers outstanding low on-resistance and reduced gate charge, engineered for minimized conduction and switching losses. This MOSFET offers superior switching performance and robust avalanche capability, making it ideal for high power density applications requiring the highest efficiency standards. Key applications include PC power supplies, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS
- Technology: Charge Balance Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | |
|---|---|---|---|---|---|
| Key Performance Parameters | |||||
| Drain-source voltage (min @ Tj(max)) | VDS | 850 | V | @ Tj(max) | |
| Pulse drain current | ID, pulse | 12 | A | ||
| RDS(ON) (max @ VGS=10V) | RDS(ON) | 1.4 | @ VGS=10V | ||
| Total gate charge | Qg | 7.5 | nC | ||
| Absolute Maximum Ratings | |||||
| Drain-source voltage | VDS | 800 | V | Tj=25C unless otherwise noted | |
| Gate-source voltage | VGS | 30 | V | Tj=25C unless otherwise noted | |
| Continuous drain current (TC=25 C) | ID | 4 | A | TC=25 C | |
| Continuous drain current (TC=100 C) | ID | 2.5 | A | TC=100 C | |
| Pulsed drain current (TC=25 C) | ID, pulse | 12 | A | TC=25 C | |
| Continuous diode forward current (TC=25 C) | IS | 4 | A | TC=25 C | |
| Diode pulsed current (TC=25 C) | IS, pulse | 12 | A | TC=25 C | |
| Power dissipation (TC=25 C) | PD | 37 | W | TC=25 C | |
| Single pulsed avalanche energy | EAS | 100 | mJ | VDD=50 V, VGS=10 V, L=10 mH, starting Tj=25 C | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0640 V | |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0640 V, ISDID | |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | ||
| Thermal Characteristics | |||||
| Thermal resistance, junction-case | RJC | 3.4 | C/W | ||
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Measured with device mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C | |
| Electrical Characteristics | |||||
| Drain-source breakdown voltage | BVDSS | 800 | V | VGS=0 V, ID=250 A | |
| 850 - 930 | V | VGS=0 V, ID=250 A, Tj=150 C | |||
| Gate threshold voltage | VGS(th) | 2.0 - 4.0 | V | VDS=VGS, ID=250 A | |
| Drain-source on-state resistance | RDS(ON) | 1.1 - 1.4 | VGS=10 V, ID=2 A | ||
| 2.75 | VGS=10 V, ID=2 A, Tj=150 C | ||||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | |
| Drain-source leakage current | IDSS | 1 | A | VDS=800 V, VGS=0 V | |
| Gate resistance | RG | 4.1 | F=1 MHz, Open drain | ||
| Dynamic Characteristics | |||||
| Input capacitance | Ciss | 363.5 | pF | VGS=0 V, VDS=50 V, =1 MHz | |
| Output capacitance | Coss | 25.5 | pF | VGS=0 V, VDS=50 V, =1 MHz | |
| Reverse transfer capacitance | Crss | 1.35 | pF | VGS=0 V, VDS=50 V, =1 MHz | |
| Turn-on delay time | td(on) | 16.8 | ns | VGS=10 V, VDS=400 V, RG=25 , ID=2 A | |
| Rise time | tr | 5.7 | ns | VGS=10 V, VDS=400 V, RG=25 , ID=2 A | |
| Turn-off delay time | td(off) | 31 | ns | VGS=10 V, VDS=400 V, RG=25 , ID=2 A | |
| Fall time | tf | 42.8 | ns | VGS=10 V, VDS=400 V, RG=25 , ID=2 A | |
| Gate Charge Characteristics | |||||
| Total gate charge | Qg | 7.5 | nC | VGS=10 V, VDS=400 V, ID=4 A | |
| Gate-source charge | Qgs | 2.1 | nC | VGS=10 V, VDS=400 V, ID=4 A | |
| Gate-drain charge | Qgd | 2.9 | nC | VGS=10 V, VDS=400 V, ID=4 A | |
| Gate plateau voltage | Vplateau | 5.6 | V | VGS=10 V, VDS=400 V, ID=4 A | |
| Body Diode Characteristics | |||||
| Diode forward voltage | VSD | 1.3 | V | IS=4 A, VGS=0 V | |
| Reverse recovery time | trr | 214.4 | ns | IS=4 A, di/dt=100 A/s | |
| Reverse recovery charge | Qrr | 1.6 | C | IS=4 A, di/dt=100 A/s | |
| Peak reverse recovery current | Irrm | 13.3 | A | IS=4 A, di/dt=100 A/s | |
| Product Name & Marking | |||||
| Product Name | OSG80R1K4DF | ||||
| Package Marking | OSG80R1K4D | TO252 | |||
| Package Information (TO252-J) | |||||
| Symbol | mm | Min | Nom | Max | |
| A | 2.20 | 2.30 | 2.38 | ||
| A1 | 0.00 | - | 0.10 | ||
| A2 | 0.90 | 1.01 | 1.10 | ||
| b | 0.72 | - | 0.85 | ||
| b1 | 0.71 | 0.76 | 0.81 | ||
| b2 | 0.72 | - | 0.90 | ||
| b3 | 5.13 | 5.33 | 5.46 | ||
| c | 0.47 | - | 0.60 | ||
| c1 | 0.46 | 0.51 | 0.56 | ||
| c2 | 0.47 | - | 0.60 | ||
| D | 6.00 | 6.10 | 6.20 | ||
| D1 | 5.25 | - | - | ||
| E | 6.50 | 6.60 | 6.70 | ||
| E1 | 4.70 | - | - | ||
| e | 2.186 | 2.286 | 2.386 | ||
| H | 9.80 | 10.10 | 10.40 | ||
| L | 1.40 | 1.50 | 1.70 | ||
| L1 | 2.90 | REF | |||
| L2 | 0.508 | BSC | |||
| L3 | 0.90 | - | 1.25 | ||
| L4 | 0.60 | 0.80 | 1.00 | ||
| L5 | 0.15 | - | 0.75 | ||
| L6 | 1.80 | REF | |||
| 0 | - | 8 | |||
| 1 | 5 | 7 | 9 | ||
| 2 | 5 | 7 | 9 | ||
| Package Information (TO252-P) | |||||
| Symbol | mm | Min | Nom | Max | |
| A | 2.20 | 2.30 | 2.38 | ||
| A1 | 0.00 | - | 0.20 | ||
| A2 | 0.97 | 1.07 | 1.17 | ||
| b | 0.68 | 0.78 | 0.90 | ||
| b3 | 5.20 | 5.33 | 5.46 | ||
| c | 0.43 | 0.53 | 0.61 | ||
| D | 5.98 | 6.10 | 6.22 | ||
| D1 | 5.30 | REF | |||
| E | 6.40 | 6.60 | 6.73 | ||
| E1 | 4.63 | - | - | ||
| e | 2.286 | BSC | |||
| H | 9.40 | 10.10 | 10.50 | ||
| L | 1.38 | 1.50 | 1.75 | ||
| L1 | 2.90 | REF | |||
| L2 | 0.51 | BSC | |||
| L3 | 0.88 | - | 1.28 | ||
| L4 | 0.50 | - | 1.00 | ||
| 0 | - | 8 | |||
| Ordering Information | |||||
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Carton Box | Units/Carton Box |
| TO252-J | 2500 | 2 | 5000 | 5 | 25000 |
| TO252-P | 2500 | 2 | 5000 | 5 | 25000 |
2508261745_ORIENTAL-SEMI-OSG80R1K4DF_C2856221.pdf
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