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quality Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFG100N08PF with Low RDS ON and Fast Switching factory
quality Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFG100N08PF with Low RDS ON and Fast Switching factory

Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFG100N08PF with Low RDS ON and Fast Switching

Key Attributes
Model Number: SFG100N08PF
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
84.1pF
Number:
-
Output Capacitance(Coss):
1.779nF
Input Capacitance(Ciss):
4.242nF
Pd - Power Dissipation:
148W
Gate Charge(Qg):
53.2nC@10V
Mfr. Part #:
SFG100N08PF
Package:
TO-220
Product Description

Product Overview

The SFG100N08PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique SFGMOS device design. This series is optimized for high systems with gate driving voltages exceeding 10V, offering low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. It is ideal for applications such as switched-mode power supplies, motor drivers, battery protection, DC-DC converters, solar inverters, and UPS/energy inverters.

Product Attributes

  • Brand: Oriental Semiconductor
  • Product Line: SFGMOS
  • Package Type: TO220
  • Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source breakdown voltage BVDSS 80 V VGS=0 V, ID=250 A
Gate threshold voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250 A
Drain-source on-state resistance RDS(ON) 6 - 6.5 m VGS=10 V, ID=12 A
Gate-source leakage current IGSS - 100 nA VGS=20 V
Drain-source leakage current IDSS 1 A VDS=80 V, VGS=0 V
Input capacitance Ciss 4242 pF VGS=0 V, VDS=25 V, =100 kHz
Output capacitance Coss 1779 pF VGS=0 V, VDS=25 V, =100 kHz
Reverse transfer capacitance Crss 84.1 pF VGS=0 V, VDS=25 V, =100 kHz
Total gate charge Qg 53.2 nC VGS=10 V, VDS=40 V, ID=50 A
Gate-source charge Qgs 17.5 nC VGS=10 V, VDS=40 V, ID=50 A
Gate-drain charge Qgd 7.2 nC VGS=10 V, VDS=40 V, ID=50 A
Diode forward voltage VSD 1.3 V IS=12 A, VGS=0 V
Reverse recovery time trr 82 ns VR=50 V, IS=50 A, di/dt=100 A/s
Reverse recovery charge Qrr 164 nC VR=50 V, IS=50 A, di/dt=100 A/s
Continuous drain current ID 100 A TC=25 C
Pulsed drain current ID, pulse 300 A TC=25 C
Continuous diode forward current IS 100 A TC=25 C
Power dissipation PD 148 W TC=25 C
Single pulsed avalanche energy EAS 135 mJ VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 C
Thermal resistance, junction-case RJC 0.84 C/W
Thermal resistance, junction-ambient RJA 62 C/W Device mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C
Operation and storage temperature TstgTj -55 to 150 C

2411220057_ORIENTAL-SEMI-SFG100N08PF_C2762910.pdf

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