PJM2301PSA S P channel transistor by PJSEMI for battery protection and power management applications
Key Attributes
Model Number:
PJM2301PSA-S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
2.9nC@4.5V
Mfr. Part #:
PJM2301PSA-S
Package:
SOT-23
Product Description
Product Overview
The PJM2301PSA-S is a P-channel enhancement mode field-effect transistor designed for high power and current handling capabilities. It is suitable for applications such as battery protection, load switching, and power management. This device is halogen and antimony-free and comes in a surface mount SOT-23 package.
Product Attributes
- Brand: PingJingSemi
- Origin: China (implied by URL)
- Material: Halogen and Antimony Free
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TC=25 | -2 | A | ||
| Pulsed Drain Current | IDM | Note1 | -10 | A | ||
| Maximum Power Dissipation | PD | 0.7 | W | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | Note2 | 178 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = - 250 A | -20 | V | ||
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 12 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = - 20 V, VGS = 0 V | -1 | A | ||
| Gate-Source Threshold Voltage | VGS(th) | Note3, VDS = VGS, ID = - 250 A | -0.4 | -1 | V | |
| Drain-Source On-State Resistance | RDS(on) | Note3, VGS = - 4.5 V, ID = - 2 A | 88 | 120 | m | |
| Drain-Source On-State Resistance | RDS(on) | Note3, VGS = - 2.5 V, ID = - 1 A | 120 | 180 | m | |
| Dynamic Parameters | ||||||
| Forward Transconductance | gfs | Note3, VDS = - 5 V, ID = - 2 A | 4 | S | ||
| Input Capacitance | Ciss | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 405 | pF | ||
| Output Capacitance | Coss | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 75 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 55 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VDS = - 10 V, VGS = - 4.5 V, ID = - 2A | 2.9 | nC | ||
| Gate-Source Charge | Qgs | VDS = - 10 V, VGS = - 4.5 V, ID = - 2A | 0.45 | nC | ||
| Gate-Drain Charge | Qg d | VDS = - 10 V, VGS = - 4.5 V, ID = - 2A | 0.75 | nC | ||
| Turn-On Delay Time | td(on) | Note3, VDD = - 10 V, RL = 10 , ID = - 1 A, VGEN = - 4.5 V, RG = 1 | 11 | 20 | ns | |
| Rise Time | tr | Note3, VDD = - 10 V, RL = 10 , ID = - 1 A, VGEN = - 4.5 V, RG = 1 | 35 | 60 | ns | |
| Turn-Off Delay Time | td(off) | Note3, VDD = - 10 V, RL = 10 , ID = - 1 A, VGEN = - 4.5 V, RG = 1 | 30 | 50 | ns | |
| Fall Time | tf | Note3, VDD = - 10 V, RL = 10 , ID = - 1 A, VGEN = - 4.5 V, RG = 1 | 10 | 20 | ns | |
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Source-Drain Diode Current | IS | Note2 | -2 | A | ||
| Body Diode Voltage | VSD | Note3, IS = - 2 A | -1.2 | V | ||
2410121608_PJSEMI-PJM2301PSA-S_C411716.pdf
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