OSG65R1K4AF MOSFET by Oriental Semiconductor Offering Low RDSon and High Avalanche Energy Capability
Product Overview
The OSG65R1K4xF series of Enhancement Mode N-Channel Power MOSFETs from Oriental Semiconductor utilizes advanced GreenMOSTM technology to deliver exceptional performance. These MOSFETs are engineered for low RDS(on), minimal gate charge, fast switching speeds, and excellent avalanche characteristics. They are ideally suited for demanding applications such as active power factor correction and switching mode power supplies, offering low switching loss and high stability for hard switching PWM.
Product Attributes
- Brand: Oriental Semiconductor
- Technology: GreenMOSTM
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Model | Package | VDS (V) | ID (A) @ TC=25 | ID, pulse (A) | RDS(ON) () @ VGS=10V | Qg (nC) | Applications |
|---|---|---|---|---|---|---|---|
| OSG65R1K4AF | TO251 | 650 | 4 | 12 | 1.4 (max) | 6.7 | Lighting, Server power supply, Charger |
| OSG65R1K4DF | TO252 | 650 | 4 | 12 | 1.4 (max) | 6.7 | Lighting, Server power supply, Charger |
| OSG65R1K4FF | TO220F | 650 | 4 | 12 | 1.4 (max) | 6.7 | Lighting, Server power supply, Charger |
| OSG65R1K4PF | TO220 | 650 | 4 | 12 | 1.4 (max) | 6.7 | Lighting, Server power supply, Charger |
Other Technical Data
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain source voltage | VDS | 650 | V | Tj=25 |
| Gate source voltage | VGS | 30 | V | Tj=25 |
| Continuous drain current | ID | 2.5 | A | TC=100 |
| Power dissipation (TO251, TO252, TO220) | PD | 28.4 | W | TC=25 |
| Power dissipation (TO220F) | PD | 24 | W | TC=25 |
| Single pulsed avalanche energy | EAS | 112 | mJ | Tj=25 |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | ||
| Drain-source breakdown voltage | BVDSS | 650 (min) / 700 (typ) / 770 (max) | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 2.0 (min) / 4.0 (max) | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 1.2 (min) / 1.4 (max) | VGS=10 V, ID=2 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=650 V, VGS=0 V |
| Input capacitance | Ciss | 259.9 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Output capacitance | Coss | 21.1 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Reverse transfer capacitance | Crss | 0.9 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Turn-on delay time | td(on) | 30.9 | ns | VGS=10 V, VDS=380 V, RG=25 , ID=4 A |
| Rise time | tr | 20.7 | ns | VGS=10 V, VDS=380 V, RG=25 , ID=4 A |
| Turn-off delay time | td(off) | 56.3 | ns | VGS=10 V, VDS=380 V, RG=25 , ID=4 A |
| Fall time | tf | 28.7 | ns | VGS=10 V, VDS=380 V, RG=25 , ID=4 A |
| Total gate charge | Qg | 6.7 | nC | ID=4 A, VDS=400 V, VGS=10 V |
| Gate-source charge | Qgs | 1.5 | nC | ID=4 A, VDS=400 V, VGS=10 V |
| Gate-drain charge | Qgd | 3.2 | nC | ID=4 A, VDS=400 V, VGS=10 V |
| Gate plateau voltage | Vplateau | 6.4 | V | ID=4 A, VDS=400 V, VGS=10 V |
| Diode forward current | IS | 4 | A | VGS |
| Pulsed source current | ISP | 12 | A | |
| Diode forward voltage | VSD | 1.3 | V | IS=4 A, VGS=0 V |
| Reverse recovery time | trr | 162 | ns | VR=400 V, IS=4 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 1.2 | C | VR=400 V, IS=4 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 7 | A | VR=400 V, IS=4 A, di/dt=100 A/s |
Ordering Information
Tube Packaging
| Package | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Box/Carton Box | Units/Carton Box |
|---|---|---|---|---|---|
| TO251 | 75 | 66 | 4950 | 6 | 29700 |
| TO220F | 50 | 20 | 1000 | 6 | 6000 |
| TO220 | 50 | 20 | 1000 | 6 | 6000 |
Tape & Reel Packaging
| Package | Units/Tape | Tapes/Inner Box | Units/Inner Box | Inner Box/Carton Box | Units/Carton Box |
|---|---|---|---|---|---|
| TO252 | 2500 | 2 | 5000 | 5 | 25000 |
2411220316_ORIENTAL-SEMI-OSG65R1K4AF_C708895.pdf
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