OSG65R1K4AF MOSFET by Oriental Semiconductor Offering Low RDSon and High Avalanche Energy Capability

Key Attributes
Model Number: OSG65R1K4AF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
0.9pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
28.4W
Gate Charge(Qg):
6.7nC@10V
Mfr. Part #:
OSG65R1K4AF
Package:
TO-251-3
Product Description

Product Overview

The OSG65R1K4xF series of Enhancement Mode N-Channel Power MOSFETs from Oriental Semiconductor utilizes advanced GreenMOSTM technology to deliver exceptional performance. These MOSFETs are engineered for low RDS(on), minimal gate charge, fast switching speeds, and excellent avalanche characteristics. They are ideally suited for demanding applications such as active power factor correction and switching mode power supplies, offering low switching loss and high stability for hard switching PWM.

Product Attributes

  • Brand: Oriental Semiconductor
  • Technology: GreenMOSTM
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Model Package VDS (V) ID (A) @ TC=25 ID, pulse (A) RDS(ON) () @ VGS=10V Qg (nC) Applications
OSG65R1K4AF TO251 650 4 12 1.4 (max) 6.7 Lighting, Server power supply, Charger
OSG65R1K4DF TO252 650 4 12 1.4 (max) 6.7 Lighting, Server power supply, Charger
OSG65R1K4FF TO220F 650 4 12 1.4 (max) 6.7 Lighting, Server power supply, Charger
OSG65R1K4PF TO220 650 4 12 1.4 (max) 6.7 Lighting, Server power supply, Charger

Other Technical Data

Parameter Symbol Value Unit Test Condition
Drain source voltage VDS 650 V Tj=25
Gate source voltage VGS 30 V Tj=25
Continuous drain current ID 2.5 A TC=100
Power dissipation (TO251, TO252, TO220) PD 28.4 W TC=25
Power dissipation (TO220F) PD 24 W TC=25
Single pulsed avalanche energy EAS 112 mJ Tj=25
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0480 V
Reverse diode dv/dt dv/dt 15 V/ns VDS=0480 V, ISDID
Operation and storage temperature Tstg, Tj -55 to 150
Drain-source breakdown voltage BVDSS 650 (min) / 700 (typ) / 770 (max) V VGS=0 V, ID=250 A
Gate threshold voltage VGS(th) 2.0 (min) / 4.0 (max) V VDS=VGS, ID=250 A
Drain-source on-state resistance RDS(ON) 1.2 (min) / 1.4 (max) VGS=10 V, ID=2 A
Gate-source leakage current IGSS 100 nA VGS=30 V
Drain-source leakage current IDSS 1 A VDS=650 V, VGS=0 V
Input capacitance Ciss 259.9 pF VGS=0 V, VDS=50 V, =1 MHz
Output capacitance Coss 21.1 pF VGS=0 V, VDS=50 V, =1 MHz
Reverse transfer capacitance Crss 0.9 pF VGS=0 V, VDS=50 V, =1 MHz
Turn-on delay time td(on) 30.9 ns VGS=10 V, VDS=380 V, RG=25 , ID=4 A
Rise time tr 20.7 ns VGS=10 V, VDS=380 V, RG=25 , ID=4 A
Turn-off delay time td(off) 56.3 ns VGS=10 V, VDS=380 V, RG=25 , ID=4 A
Fall time tf 28.7 ns VGS=10 V, VDS=380 V, RG=25 , ID=4 A
Total gate charge Qg 6.7 nC ID=4 A, VDS=400 V, VGS=10 V
Gate-source charge Qgs 1.5 nC ID=4 A, VDS=400 V, VGS=10 V
Gate-drain charge Qgd 3.2 nC ID=4 A, VDS=400 V, VGS=10 V
Gate plateau voltage Vplateau 6.4 V ID=4 A, VDS=400 V, VGS=10 V
Diode forward current IS 4 A VGS
Pulsed source current ISP 12 A
Diode forward voltage VSD 1.3 V IS=4 A, VGS=0 V
Reverse recovery time trr 162 ns VR=400 V, IS=4 A, di/dt=100 A/s
Reverse recovery charge Qrr 1.2 C VR=400 V, IS=4 A, di/dt=100 A/s
Peak reverse recovery current Irrm 7 A VR=400 V, IS=4 A, di/dt=100 A/s

Ordering Information

Tube Packaging

Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box
TO251 75 66 4950 6 29700
TO220F 50 20 1000 6 6000
TO220 50 20 1000 6 6000

Tape & Reel Packaging

Package Units/Tape Tapes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box
TO252 2500 2 5000 5 25000

2411220316_ORIENTAL-SEMI-OSG65R1K4AF_C708895.pdf

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