power MOSFET orisilicon OSM4N90SJ engineered for operation and thermal resistance in industrial circuits
Key Attributes
Model Number:
OSM4N90SJ
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
4.2A
RDS(on):
1.4Ω@10V
Operating Temperature -:
-40℃~+85℃
Gate Threshold Voltage (Vgs(th)):
4V@150uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Input Capacitance(Ciss):
450pF
Output Capacitance(Coss):
50pF
Gate Charge(Qg):
10.3nC@10V
Mfr. Part #:
OSM4N90SJ
Package:
TO-220FB
Product Description
Product Overview
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | Gate | Drain | Source | Absolute Maximum Ratings | Thermal Resistance (Junction-to-Ambient) | Thermal Resistance (Junction-to-Board) |
| 4N90SJ XXXXX | 1 | 2 | 3 | Parameters guaranteed by design, measurement correction. Note: Exceeding the above absolute maximum ratings may cause permanent damage to the device. This is only a rating stress value, not involved in the functional operation of the device under these or any other conditions beyond the indicators of this technical specification. Long-term operation under absolute maximum rating conditions will affect device reliability. Absolute maximum ratings are only suitable for individual applications, not for combined use. If the junction temperature exceeds the limit, the chip will be damaged. Monitoring the ambient temperature does not guarantee that the rated temperature limit will not be exceeded. In applications with high power consumption and poor thermal resistance, the maximum ambient temperature may need to be reduced. In applications with moderate power consumption and low thermal resistance, the maximum ambient temperature can exceed the maximum limit as long as the junction temperature is within the rated limit. The junction temperature ( ) of the device depends on the ambient temperature ( ), the device power consumption ( ), and the junction-to-ambient thermal resistance of the package ( ). The maximum junction temperature is calculated by ambient temperature and power consumption using the following formula: The junction-to-ambient thermal resistance of the package is based on modeling and calculation methods using a layer board, and mainly depends on the application and board layout. In applications with higher power consumption, special attention needs to be paid to the thermal board design. The value of may vary with material, layout, and environmental conditions. The rating of is based on a layer circuit board. For details on the board structure, please refer to and . is a junction-to-board thermal characteristic parameter, in units of The package's is based on modeling and calculation methods using a layer board. The report and use of the electronic package thermal information guide state that thermal characteristic parameters and thermal resistance are not the same. measures the device power flowing along multiple thermal paths, while only involves one path. Therefore, the thermal path includes convection from the top of the package and radiation from the package, which makes more useful in real applications. The maximum junction temperature is calculated by board temperature and power consumption using the following formula: For details on , please refer to and . and are for the worst-case conditions, i.e., the device is soldered to the board to achieve the surface mount package. | ||
| 4N90SJ YMLLL | 1 | 2 | 3 |
2504101957_orisilicon-OSM4N90SJ_C42464445.pdf
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