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quality Dual channel transistor orisilicon OSM15N10X2 optimized for low gate charge and continuous current handling factory
quality Dual channel transistor orisilicon OSM15N10X2 optimized for low gate charge and continuous current handling factory

Dual channel transistor orisilicon OSM15N10X2 optimized for low gate charge and continuous current handling

Key Attributes
Model Number: OSM15N10X2
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
130mΩ@10V
Operating Temperature -:
-40℃~+85℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
46pF
Number:
2 N-Channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
920pF
Gate Charge(Qg):
20nC@4V
Mfr. Part #:
OSM15N10X2
Package:
SOP-8
Product Description

Product Overview

The OSM15N10 X2 is a dual-channel device featuring low on-resistance, continuous current capability, low gate charge, low gate voltage, and high current conduction capability. It is suitable for applications such as load switching and control. The device is housed in a package.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterValueConditions
On-resistanceNot specifiedAt VGS = 20V
Continuous CurrentNot specifiedNot specified
Gate ChargeLowNot specified
Gate VoltageLowNot specified
Current Conduction CapabilityHighNot specified
Package TypeOSM15N10 X2Not specified
Absolute Maximum RatingsNot specifiedExceeding these ratings may cause permanent damage. Ratings are for stress only, not functional operation. Long-term operation at maximum ratings can affect reliability. Ratings are for individual application, not combined use. Junction temperature above limit will damage chip. Monitoring ambient temperature does not guarantee exceeding rated temperature limits. In high power dissipation/poor thermal resistance applications, maximum ambient temperature may need to be reduced. In moderate power dissipation/low thermal resistance applications, maximum ambient temperature can exceed maximum limits as long as junction temperature is within rated limits.
Junction Temperature (TJ)CalculatedTJ = TA + (PD * RJA)
RJA (Junction-to-Ambient Thermal Resistance)Not specifiedBased on layer board modeling and calculation methods. Varies with material, layout, and environmental conditions. Rated based on layer circuit board. Refer to and for detailed information.
Junction-to-Board Thermal Characteristics (RJB)Not specifiedBased on layer board modeling and calculation methods. Refer to and for detailed information.
RJA vs. RJBRJA measures power flowing along multiple thermal paths. RJB involves only one path. RJA includes convection from package top and radiation from package, making it more useful in real applications.Not specified
Junction Temperature (TJ)CalculatedTJ = TB + (PD * RJB)
Worst-Case ConditionsDevice soldered to board for surface mount package.Not specified
Product Marking15N10X2 YMLLL1. PIN1 2. 15N10 = Device Name 3. Y = Year 4. M = Month 5. LLL = Trace No

2411220032_orisilicon-OSM15N10X2_C41417374.pdf

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