Power MOSFET PJSEMI PJM65N40DN featuring 65A drain current and low on resistance for load switching
Key Attributes
Model Number:
PJM65N40DN
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
65A
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
165pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.4nF
Pd - Power Dissipation:
33.7W
Output Capacitance(Coss):
192pF
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
PJM65N40DN
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The PJM65N40DN is an N-Channel Enhancement Mode Power MOSFET designed for high-performance applications. It features excellent RDS(ON) and low gate charge, making it suitable for battery protection, load switching, and uninterruptible power supplies. With a VDS of 40V and ID of 65A, it offers low on-resistance at various gate-source voltages (RDS(on)< 9m @VGS= 10V, RDS(on)< 12m @VGS= 4.5V).
Product Attributes
- Brand: PJM (PingJingSemi)
- Origin: China (implied by website)
- Material: Silicon (implied by MOSFET technology)
- Certifications: None explicitly mentioned
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | VDS | 40 | V | |||
| VGS | 20 | V | ||||
| ID | VGS=10V, Note1 | 65 | A | |||
| IDM | Note2 | 200 | A | |||
| EAS | Note3 | 81 | mJ | |||
| PD | Note4 | 33.7 | W | |||
| Electrical Characteristics (TJ=25 unless otherwise specified) | V(BR)DSS | VGS=0V,ID=250A | 40 | -- | -- | V |
| IDSS | VDS=40V,VGS=0V | -- | -- | 1 | A | |
| IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA | |
| VGS(th) | VDS=VGS,ID=250A, Note2 | 1.2 | 1.6 | 2.5 | V | |
| RDS(on) | VGS=10V,ID=30A, Note2 | -- | 7.7 | 9 | m | |
| RDS(on) | VGS=4.5V,ID=15A, Note2 | -- | 9.4 | 12 | m | |
| gfs | VGS=5V,ID=30A, Note2 | -- | 22 | -- | S | |
| Dynamic Characteristics | Ciss | VDS=20V,VGS=0V,f=1MHz | -- | 2400 | -- | pF |
| Coss | -- | 192 | -- | pF | ||
| Crss | -- | 165 | -- | pF | ||
| Gate Resistance | Rg | VDS=0V, VGS=0V, f=1MHz | -- | 1.7 | 3.4 | |
| Switching Characteristics | td(on) | VDD=30V, ID=25A, VGS=10V,RG=1 | -- | 12 | -- | nS |
| tr | -- | 12 | -- | nS | ||
| td(off) | -- | 38 | -- | nS | ||
| tf | -- | 9 | -- | nS | ||
| Total Gate Charge | Qg | VDS=20V,ID=25A, VGS=10V | -- | 37 | -- | nC |
| Qgs | -- | 6 | -- | nC | ||
| Qgd | -- | 7 | -- | nC | ||
| Source-Drain Diode Characteristics | VSD | VGS=0V,IS=1A, Note2 | -- | -- | 1.2 | V |
| IS | Note1,5 | -- | -- | 50 | A |
2510141655_PJSEMI-PJM65N40DN_C52117972.pdf
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