60 Amp IGBT onsemi FGL60N100BNTDTU 1000 Volt with Advanced NPT Technology and High Input Impedance
Key Attributes
Model Number:
FGL60N100BNTDTU
Product Custom Attributes
Td(off):
630ns
Pd - Power Dissipation:
180W
Td(on):
140ns
Collector-Emitter Breakdown Voltage (Vces):
1kV
Reverse Transfer Capacitance (Cres):
200pF
Input Capacitance(Cies):
6nF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@60mA
Gate Charge(Qg):
275nC@15V
Operating Temperature:
-55℃~+150℃@(Tj)
Output Capacitance(Coes):
260pF
Reverse Recovery Time(trr):
1.2us
Turn-On Energy (Eon):
-
Mfr. Part #:
FGL60N100BNTDTU
Package:
TO-264-3
Product Description
Product Overview
The FGL60N100BNTD is a 1000 V, 60 A NPT Trench IGBT utilizing Fairchild's proprietary trench design and advanced NPT technology. It offers superior conduction and switching performance, high avalanche ruggedness, and easy parallel operation, making it ideal for hard switching applications such as UPS and welders. The device features high input impedance and a built-in fast recovery diode.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Trademarks: ON Semiconductor, ON Semiconductor logo
- Patents, Trademarks, Copyrights, Trade Secrets: Owned by ON Semiconductor
- Product/Patent Coverage: Accessible at www.onsemi.com/site/pdf/Patent-Marking.pdf
- Copyright: 2000 Fairchild Semiconductor Corporation
- Equal Opportunity/Affirmative Action Employer
Technical Specifications
| Part Number | Top Mark | Package | Collector to Emitter Voltage (Vces) | Gate to Emitter Voltage (Vges) | Collector Current (IC @ TC=25C) | Collector Current (IC @ TC=100C) | Pulsed Collector Current (ICM @ TC=25C) | Diode Continuous Forward Current (IF @ TC=100C) | Max Power Dissipation (PD @ TC=25C) | Max Power Dissipation (PD @ TC=100C) | Operating Junction Temperature (TJ) | Storage Temperature Range (Tstg) | Max Lead Temp. (TL) | Thermal Resistance Junction to Case (RJC(IGBT)) | Thermal Resistance Junction to Case (RJC(Diode)) | Thermal Resistance Junction to Ambient (RJA) | Collector to Emitter Breakdown Voltage (BVCES) | Collector Cut-Off Current (ICES) | G-E Leakage Current (IGES) | G-E Threshold Voltage (VGE(th)) | Collector to Emitter Saturation Voltage (VCE(sat) @ IC=10A, VGE=15V) | Collector to Emitter Saturation Voltage (VCE(sat) @ IC=60A, VGE=15V) | Input Capacitance (Cies) | Output Capacitance (Coes) | Reverse Transfer Capacitance (Cres) | Turn-On Delay Time (td(on)) | Rise Time (tr) | Turn-Off Delay Time (td(off)) | Fall Time (tf) | Total Gate Charge (Qg) | Gate to Emitter Charge (Qge) | Gate to Collector Charge (Qgc) | Diode Forward Voltage (VFM @ IF=15A) | Diode Forward Voltage (VFM @ IF=60A) | Diode Reverse Recovery Time (trr) | Instantaneous Reverse Current (IR) |
| FGL60N100BNTD | FGL60N100BNTD | TO-264 | 1000 V | 25 V | 60 A | 42 A | 200 A | 15 A | 180 W | 72 W | -55 to +150 C | -55 to +150 C | 300 C | 0.69 C/W | 2.08 C/W | 25 C/W | 1000 V | 1 mA | 500 nA | 4.0 - 7.0 V | - 1.5 1.8 V | - 2.5 2.9 V | - 6000 pF | - 260 pF | - 200 pF | - 140 ns | - 320 ns | - 630 ns | - 130 ns | - 275 nC | - 45 nC | - 95 nC | - 1.2 1.7 V | - 1.8 2.1 V | 1.2 - 1.5 us | 0.05 - 2.0 uA |
2410121732_onsemi-FGL60N100BNTDTU_C105610.pdf
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