Complementary N Channel and P Channel Power MOSFET PJSEMI PJM30C30DL for power management applications
Key Attributes
Model Number:
PJM30C30DL
Product Custom Attributes
Mfr. Part #:
PJM30C30DL
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The PJM30C30DL is a complementary N-Channel and P-Channel Power MOSFET designed for power management applications. It features advanced trench technology, 100% avalanche tested, and is RoHS compliant, halogen and antimony free. Ideal for use in brushless motors and portable equipment, this MOSFET offers efficient power control with low on-resistance characteristics.
Product Attributes
- Brand: PJM
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | N-Channel | P-Channel | Unit |
| Product Summary | |||
| VDS | 30V | -30V | V |
| ID | 28A | -32A | A |
| RDS(on) @VGS=10V | <13m | <18m | m |
| RDS(on) @VGS=4.5V | <17m | <26m | m |
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDS) | 30 | -30 | V |
| Gate-Source Voltage (VGS) | 20 | V | |
| Drain Current-Continuous (ID) | 28 | -32 | A |
| Drain Current-Pulsed (IDM) | 100 | -108 | A |
| Maximum Power Dissipation (PD) | 18 | 28 | W |
| Junction Temperature (TJ) | 150 | C | |
| Storage Temperature Range (TSTG) | -55 to +150 | C | |
| Thermal Resistance, Junction-to-Case (RJC) | 6.94 | 4.46 | C/W |
| Single Pulse Avalanche Energy (EAS) | 30 | 39 | mJ |
| N-Channel Electrical Characteristics (Ta=25 unless otherwise specified) | |||
| Drain-Source Breakdown Voltage (V(BR)DSS) | 30 | -- | V |
| Zero Gate Voltage Drain Current (IDSS) | -- | 1 A | A |
| Gate-Body Leakage Current (IGSS) | 100 nA | nA | |
| Gate Threshold Voltage (VGS(th)) | 1 to 2.5 | -- | V |
| Drain-Source On-Resistance (RDS(on)) @VGS=10V,ID=15A | <13 | -- | m |
| Drain-Source On-Resistance (RDS(on)) @VGS=4.5V,ID=10A | <17 | -- | m |
| Input Capacitance (Ciss) | -- 1025 -- | -- 960 -- | pF |
| Output Capacitance (Coss) | -- 128 -- | -- 170 -- | pF |
| Reverse Transfer Capacitance (Crss) | -- 100 -- | -- 143 -- | pF |
| Total Gate Charge (Qg) | -- 20 -- | -- 22 -- | nC |
| Gate-Source Charge (Qgs) | -- 4 -- | -- 3 -- | nC |
| Gate-Drain Charge (Qgd) | -- 5 -- | -- 6 -- | nC |
| Turn-on Delay Time (td(on)) | -- 6 -- | -- 10 -- | nS |
| Turn-on Rise Time (tr) | -- 19 -- | -- 14 -- | nS |
| Turn-off Delay Time (td(off)) | -- 22 -- | -- 50 -- | nS |
| Turn-off Fall Time (tf) | -- 5 -- | -- 20 -- | nS |
| Diode Forward Voltage (VSD) @IS=15A | -- -- 1.2 | -- -- 1.2 | V |
| Diode Forward Current (IS) | -- -- 28 | -- -- 32 | A |
| Forward Transconductance (gFS) @ID=3A | -- 8.2 -- | -- 7 -- | S |
2510141655_PJSEMI-PJM30C30DL_C52117968.pdf
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