High current conduction MOSFET orisilicon OSM45N10 designed for load switch and control applications
Key Attributes
Model Number:
OSM45N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-40℃~+125℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Input Capacitance(Ciss):
1.02nF
Output Capacitance(Coss):
540pF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
OSM45N10
Package:
TO-263
Product Description
Product Description
A channel device that achieves low on-resistance and continuous current at a gate-source voltage of [value]. It features low gate charge, low gate voltage, and high current conduction capability. Suitable for applications such as load switches and control. Available in [package type] and [package type] packages.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Condition |
|---|---|---|
| On-resistance (RDS(on)) | [value] | VGS = [value] |
| Continuous Current (ID) | [value] | [condition] |
| Gate Charge (Qg) | Low | Not specified |
| Gate Voltage (VGS) | Low | Not specified |
| Current Conduction Capability | High | Not specified |
| Package Thermal Resistance (RthJC) | [value] | [unit] |
| Package Thermal Resistance (RthJA) | [value] | [unit] |
| Maximum Junction Temperature (TJ(max)) | Calculated by TA and PD | TJ(max) = TA + (RthJA * PD) |
| Maximum Junction Temperature (TJ(max)) | Calculated by TBoard and PD | TJ(max) = TBoard + (RthJB * PD) |
2504101957_orisilicon-OSM45N10_C42464484.pdf
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