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quality N Channel IGBT Power Module onsemi FGY100T120SWD 1200 Volt 100 Amp with Gen7 Diode in TO247 Package factory
quality N Channel IGBT Power Module onsemi FGY100T120SWD 1200 Volt 100 Amp with Gen7 Diode in TO247 Package factory

N Channel IGBT Power Module onsemi FGY100T120SWD 1200 Volt 100 Amp with Gen7 Diode in TO247 Package

Key Attributes
Model Number: FGY100T120SWD
Product Custom Attributes
Td(off):
168ns
Pd - Power Dissipation:
866W
Td(on):
46.4ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
41.4pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.6V@100mA
Gate Charge(Qg):
284nC@15V
Reverse Recovery Time(trr):
152ns
Switching Energy(Eoff):
1.6mJ
Turn-On Energy (Eon):
3.1mJ
Input Capacitance(Cies):
8.489nF
Pulsed Current- Forward(Ifm):
400A
Output Capacitance(Coes):
320pF
Mfr. Part #:
FGY100T120SWD
Package:
TO-247-3LD
Product Description

Product Overview

The FGY100T120SWD is a 1200 V, 100 A N-Channel IGBT Power Module utilizing novel Field Stop 7th generation IGBT technology and a Gen7 Diode in a TO247 3-lead package. It offers optimized performance with low switching and conduction losses, making it ideal for high-efficiency operations in applications such as Solar, UPS, and Energy Storage Systems (ESS).

Product Attributes

  • Brand: onsemi
  • Technology: Field Stop VII (FS7)
  • Package: TO247-3L
  • Certifications: RoHS Compliant

Technical Specifications

Parameter Symbol Value Unit Test Condition
Collector-to-Emitter Voltage VCES 1200 V
Gate-to-Emitter Voltage VGES ±20 V
Collector Current (TC = 100C) IC 100 A TC = 100C
Power Dissipation (TC = 100C) PD 433 W TC = 100C
Diode Forward Current (TC = 100C) IF 100 A TC = 100C
Maximum Junction Temperature TJ 175 °C
Collector-to-Emitter Saturation Voltage VCE(SAT) 1.35 - 2.0 V VGE = 15 V, IC = 100 A, TJ = 25°C
Gate Threshold Voltage VGE(TH) 5.6 - 7.4 V VGE = VCE, IC = 100 mA
Thermal Resistance, Junction-to-Case (IGBT) R JC 0.17 °C/W
Thermal Resistance, Junction-to-Case (Diode) R JC 0.29 °C/W
Thermal Resistance, Junction-to-Ambient R JA 40 °C/W
Forward Voltage (IF = 100 A, TJ = 25°C) VF 1.62 - 2.22 V IF = 100 A, TJ = 25°C
Reverse Recovery Time (IF = 100 A, TJ = 25°C) trr 261 ns VR = 600 V, IF = 100 A, dIF/dt = 1000 A/μs, TJ = 25°C

2410010333_onsemi-FGY100T120SWD_C22379659.pdf

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