High Ruggedness OSEN OSD12N50 500V N CHANNEL MOSFET Suitable for Switch Mode Power Supplies and Ballasts
Key Attributes
Model Number:
OSD12N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
12A
RDS(on):
480mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Output Capacitance(Coss):
265pF
Input Capacitance(Ciss):
1.943nF
Pd - Power Dissipation:
55W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
OSD12N50
Package:
TO-252
Product Description
Product Overview
The OSD12N50 is a 500V N-CHANNEL MOSFET from OSEN, designed for high efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt performance with high ruggedness. This MOSFET is ideal for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSD12N50
- Revision: 21.2.10
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max |
| Ratings | |||||
| Drain-Source Voltage (VDSS) | V | 500 | |||
| Gate-Source Voltage-Continuous (VGS) | V | ±30 | |||
| Drain Current-Continuous (ID) | A | 12 | |||
| Drain Current-Single Plused (IDM) | A | 48 | |||
| Power Dissipation (PD) | W | 55 | |||
| Max.Operating junction temperature (Tj) | 150 | ||||
| Electrical characteristics (Tc=25°C unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | ID=250µA, VGS=0V, TJ=25°C | 500 | -- | -- |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGS, ID=250µA | 2.0 | -- | 4.0 |
| Drain-Source On-Resistance (RDS(on)) | Ω | VGS=10V, ID=6A | -- | 0.48 | -- |
| Gate-Body Leakage Current (IGSS) | nA | VGS=±30V, VDS=0 | -- | -- | ±100 |
| Zero Gate Voltage Drain Current (IDSS) | µA | VDS=100V, VGS=0 | -- | -- | 10 |
| Forward Transconductance (gfs) | S | VDS=15V, ID=20A | 2.5 | -- | -- |
| Switching Characteristics | |||||
| Turn-On Delay Time (Td(on)) | ns | VDS=250V, ID=12A, RG=25Ω | -- | 28 | 65 |
| Rise Time (Tr) | ns | -- | 54 | 120 | |
| Turn-Off Delay Time (Td(off)) | ns | -- | 75 | 160 | |
| Fall Time (Tf) | ns | -- | 47 | 105 | |
| Total Gate Charge (Qg) | nC | VDS=400V, VGS=10V, ID=12A | -- | 30 | 39 |
| Gate-Source Charge (Qgs) | nC | -- | 8 | -- | |
| Gate-Drain Charge (Qgd) | nC | -- | 12 | -- | |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | pF | VDS=25V, VGS=0, f=1MHz | -- | 1450 | 1943 |
| Output Capacitance (Coss) | pF | -- | 198 | 265 | |
| Reverse Transfer Capacitance (Crss) | pF | -- | 14.5 | 22 | |
| Diode Forward Current (IS) (Note 2) | A | -- | -- | 12 | |
| Diode Forward On-Voltage (VSD) | V | IS=12A, VGS=0 | -- | -- | 1.5 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | °C/W | -- | 2.27 | -- | |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300µs, duty cycle <= 2%.
2410121732_OSEN-OSD12N50_C20607758.pdf
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