Surface Mount Power MOSFET PJSEMI PJM2333PSC P Channel Type with 12V Maximum Drain Source Voltage and 30m Ohm RDS
Key Attributes
Model Number:
PJM2333PSC
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
11.5nC@4.5V
Mfr. Part #:
PJM2333PSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM2333PSC is a P-Channel Enhancement Mode Power MOSFET designed for surface mount applications. It offers high power and current handling capability, making it suitable for load switching, PWM applications, and power management. Key features include a VDS of -12V, ID of -6A, and RDS(on) as low as 30m at VGS=-4.5V.
Product Attributes
- Brand: Pingjing Semiconductor (implied by www.pingjingsemi.com)
- Package: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 12 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | -ID | 6 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.25 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 100 | °C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 12 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-12V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250μA | 0.4 | 0.65 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-4.5V,ID=-6A | -- | 19 | 30 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-2.5V,ID=-5A | -- | 26 | 45 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=-5V,ID=-6A | -- | 17 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-6V,VGS=0V,f=1MHz | -- | 1100 | -- | pF |
| Output Capacitance | Coss | -- | 390 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 300 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-6V, ID=-1A,VGS=-4.5V,RGEN=6Ω, RL=6Ω | -- | 25 | -- | nS |
| Turn-on Rise Time | tr | -- | 45 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 72 | -- | nS | |
| Turn-off Fall Time | tf | -- | 60 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-6V,ID=-6A, VGS=-4.5V | -- | 11.5 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1.5 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 3.2 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-6A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 6 | A |
2410221617_PJSEMI-PJM2333PSC_C41784035.pdf
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