Low Voltage N Channel MOSFET OSEN OSD50N03T Ideal for Synchronous Rectification and Power Conversion
Key Attributes
Model Number:
OSD50N03T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
125pF
Input Capacitance(Ciss):
855pF
Pd - Power Dissipation:
60W
Output Capacitance(Coss):
315pF
Mfr. Part #:
OSD50N03T
Package:
TO-252
Product Description
Product Overview
The OSD50N03T is a Low Voltage N-channel MOSFET designed for applications requiring fast switching speeds, low gate charge, and high power/current handling capabilities. It is RoHS compliant and suitable for DC to DC converters and synchronous rectification.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSD50N03T
- Revision: 21.2.10
- Certifications: RoHS compliant
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | V | 30 | |||
| Gate-Source Voltage-Continuous (VGS) | V | ±20 | |||
| Drain Current-Continuous (ID) (Note 2) | A | 50 | |||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 200 | |||
| Power Dissipation (PD) (Note 2) | W | 60 | |||
| Max.Operating junction temperature (Tj) | 150 | ||||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | ID=250µA, VGS=0V | 30 | -- | -- |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGS, ID=250µA | 1.0 | 1.5 | 2.5 |
| Drain-Source On-Resistance (RDS(on)) | mΩ | VGS=10V, ID=20A | -- | 6.0 | -- |
| Gate-Body Leakage Current (IGSS) | nA | VGS=±20V, VDS=0 | -- | -- | ±100 |
| Zero Gate Voltage Drain Current (IDSS) | µA | VDS=30V, VGS=0 | -- | -- | 1 |
| Forward Transconductance (gfs) | S | VDS=5V, ID=10A | -- | 12 | -- |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | ns | VGS=4.5V, VDS=25V,ID=20A, RG=1Ω | -- | 8.5 | -- |
| Rise Time (tr) | ns | -- | 28 | -- | |
| Turn-Off Delay Time (td(off)) | ns | -- | 25 | -- | |
| Fall Time (tf) | ns | -- | 11 | -- | |
| Total Gate Charge (Qg) | nC | VDS=20, VGS=4.5V, ID=20A | -- | 20 | -- |
| Gate-Source Charge (Qgs) | nC | -- | 2.5 | -- | |
| Gate-Drain Charge (Qgd) | nC | -- | 10 | -- | |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | pF | VDS=25V, VGS=0, f=1MHz | -- | 855 | -- |
| Output Capacitance (Coss) | pF | -- | 315 | -- | |
| Reverse Transfer Capacitance (Crss) | pF | -- | 125 | -- | |
| Diode Forward Current-Continuous (IS) (Note 2) | A | -- | -- | 50 | |
| Diode Forward On-Voltage (VSD) | V | IS=20A, VGS=0 | -- | -- | 1.2 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- | -- | 2.08 | |
2504101957_OSEN-OSD50N03T_C47148326.pdf
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