Industrial motor drive power module onsemi NXH25C120L2C2SG with six 25 amp 1600 volt rectifiers and brake IGBT included
Key Attributes
Model Number:
NXH25C120L2C2SG
Product Custom Attributes
Td(off):
235ns
Td(on):
68ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
117pF
Input Capacitance(Cies):
6.2nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.8V@3.04mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
370A
Switching Energy(Eoff):
720uJ
Turn-On Energy (Eon):
2.2mJ
Mfr. Part #:
NXH25C120L2C2SG
Package:
DIP-26
Product Description
Product Overview
The NXH25C120L2C2SG is a transfer-molded power module featuring a converter-inverter-brake circuit. It integrates six 25 A, 1600 V rectifiers, six 25 A, 1200 V IGBTs with inverse diodes, one 25 A, 1200 V brake IGBT with brake diode, and an NTC thermistor. Key advantages include low thermal resistance and a compact package with solderable pins. This module is suitable for industrial motor drives and servo drives.
Product Attributes
- Brand: onsemi (Semiconductor Components Industries, LLC)
- Certifications: PbFree, Halogen Free/BFR Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes | |
| IGBT CHARACTERISTICS | |||||
| IGBT CollectorEmitter Voltage | VCES | 1200 | V | ||
| GateEmitter Voltage | VGE | 20 | V | ||
| Continuous Collector Current @ TC = 80C | IC | 25 | A | (TvJmax = 175C) | |
| Pulsed Collector Current | ICpulse | 75 | A | ||
| CollectorEmitter Cutoff Current | ICES | 250 | A | VGE = 0 V, VCE = 1200 V | |
| CollectorEmitter Saturation Voltage @ TJ = 25C | VCE(sat) | 1.7 - 2.4 | V | VGE = 15 V, IC = 25 A | |
| CollectorEmitter Saturation Voltage @ TJ = 150C | VCE(sat) | 1.9 | V | VGE = 15 V, IC = 25 A | |
| GateEmitter Threshold Voltage | VGE(TH) | 4.8 - 6.8 | V | IC = 3.04 mA | |
| Gate Leakage Current | IGES | 400 | nA | VGE = 20 V, VCE = 0 V | |
| Turnon Delay Time @ TJ = 25C | td(on) | 68 | ns | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Rise Time @ TJ = 25C | tr | 63 | ns | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Turnoff Delay Time @ TJ = 25C | td(off) | 235 | ns | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Fall Time @ TJ = 25C | tf | 48 | ns | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Turnon Switching Loss per Pulse @ TJ = 25C | Eon | 2200 | J | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Turn off Switching Loss per Pulse @ TJ = 25C | Eoff | 720 | J | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Turnon Delay Time @ TJ = 125C | td(on) | 72 | ns | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Rise Time @ TJ = 125C | tr | 56 | ns | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Turnoff Delay Time @ TJ = 125C | td(off) | 266 | ns | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Fall Time @ TJ = 125C | tf | 54 | ns | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Turnon Switching Loss per Pulse @ TJ = 125C | Eon | 3050 | J | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Turn off Switching Loss per Pulse @ TJ = 125C | Eoff | 1200 | J | VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20 | |
| Input Capacitance | Cies | 6200 | pF | VCE = 20 V. VGE = 0 V f = 100 kHz | |
| Output Capacitance | Coes | 212 | pF | VCE = 20 V. VGE = 0 V f = 100 kHz | |
| Reverse Transfer Capacitance | Cres | 117 | pF | VCE = 20 V. VGE = 0 V f = 100 kHz | |
| Total Gate Charge | Qg | 269 | nC | VCE = 600 V, IC = 25 A, VGE = 0 V ~ +15 V | |
| Temperature under switching conditions | Tvj op | 40 - 150 | C | ||
| Thermal Resistance chiptocase | RthJC | 0.54 | C/W | ||
| DIODE CHARACTERISTICS (Brake Diode) | |||||
| Brake Diode Reverse Leakage Current | IR | 200 | A | VR = 1200 V | |
| Diode Forward Voltage @ TJ = 25C | VF | 1.9 - 2.6 | V | IF = 25 A | |
| Diode Forward Voltage @ TJ = 150C | VF | 1.7 | V | IF = 25 A | |
| Temperature under switching conditions | Tvj op | 40 - 150 | C | ||
| Thermal Resistance chiptocase | RthJC | 1.10 | C/W | ||
| RECTIFIER DIODE CHARACTERISTICS | |||||
| Rectifier Peak Repetitive Reverse Voltage | VRRM | 1600 | V | ||
| Continuous Forward Current @ TC = 80C | IF | 25 | A | (TvJmax = 150C) | |
| Repetitive Peak Forward Current | IFRM | 75 | A | ||
| I2t value @ 25C | I2t | 680 | A2t | (10 ms single halfsine wave) | |
| I2t value @ 150C | I2t | 360 | A2t | (10 ms single halfsine wave) | |
| Surge current @ 25C | IFSM | 370 | A | (10 ms sin180) | |
| Rectifier Reverse Leakage Current | IR | 200 | A | VR = 1600 V | |
| Rectifier Forward Voltage @ TJ = 25C | VF | 1 - 1.5 | V | IF = 25 A | |
| Rectifier Forward Voltage @ TJ = 150C | VF | 1.1 | V | IF = 35 A | |
| Temperature under switching conditions | Tvj op | 40 - 150 | C | ||
| Thermal Resistance chiptocase | RthJC | 0.86 | C/W | ||
| THERMAL PROPERTIES | |||||
| Storage Temperature range | Tstg | 40 to 125 | C | ||
| INSULATION PROPERTIES | |||||
| Isolation test voltage, t = 1 sec, 50 Hz | Vis | 3000 | VRMS | ||
| Creepage distance | 6.0 | mm | |||
| Clearance distance | 6.0 | mm | |||
| Comperative Tracking Index | CTI | > 400 | |||
2410121953_onsemi-NXH25C120L2C2SG_C906528.pdf
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