switching 100V N channel MOSFET OSEN IRF3710PBF ideal for power supplies and electronic lamp ballasts
Key Attributes
Model Number:
IRF3710PBF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
59A
Operating Temperature -:
-
RDS(on):
14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
400pF
Pd - Power Dissipation:
160W
Input Capacitance(Ciss):
2.78nF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
IRF3710PBF
Package:
TO-220AB
Product Description
Product Overview
The IRF3710PBF is a 100V N-CHANNEL MOSFET designed for high efficiency and ruggedness. It features fast switching speed, high input impedance, low level drive, and improved dv/dt capability. This MOSFET is suitable for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: IRF3710PBF
- Revision: 21.2.10
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | V | 100 | ||||
| Gate-Source Voltage-Continuous (VGS) | V | ±20 | ||||
| Drain Current-Continuous (ID) (Note 2) | A | 59 | ||||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 230 | ||||
| Power Dissipation (PD) (Note 2) | W | 160 | ||||
| Max.Operating junction temperature (Tj) | °C | 150 | ||||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage Current (BVDSS) (Note 1) | V | ID=250µA, VGS=0V, TJ=25°C | 100 | -- | -- | |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGS, ID=250µA | 2.0 | -- | 4.0 | |
| Drain-Source On-Resistance (RDS(on)) | Ω | VGS=10V, ID=10A | -- | 0.014 | -- | |
| Gate-Body Leakage Current (IGSS) | nA | VGS=±20V, VDS=0 | -- | -- | ±100 | |
| Zero Gate Voltage Drain Current (IDSS) | µA | VDS=100V, VGS=0 | 1 | -- | 100 | |
| Forward Transconductance (gfs) | S | VDS=10V, ID=15A | 8 | -- | -- | |
| Switching Characteristics | ||||||
| Turn-On Delay Time (td(on)) | ns | VDS=50V, ID=30A, RG=2.5Ω (Note 2) | -- | 25 | -- | |
| Rise Time (tr) | ns | -- | 7 | -- | ||
| Turn-Off Delay Time (td(off)) | ns | -- | 45 | -- | ||
| Fall Time (tf) | ns | -- | 8 | -- | ||
| Total Gate Charge (Qg) | nC | VDS=80V , VGS=10V, ID=30A (Note 2) | -- | 60 | -- | |
| Gate-Source Charge (Qgs) | nC | -- | 12 | -- | ||
| Gate-Drain Charge (Qgd) | nC | -- | 15 | -- | ||
| Dynamic Characteristics | ||||||
| Input Capacitance (Ciss) | pF | VDS=50V, VGS=0, f=1MHz | -- | 2780 | -- | |
| Output Capacitance (Coss) | pF | -- | 400 | -- | ||
| Reverse Transfer Capacitance (Crss) | pF | -- | 35 | -- | ||
| Diode Characteristics | ||||||
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- | -- | 59 | ||
| Diode Forward On-Voltage (VSD) | V | IS=59A, VGS=0 | -- | -- | 1.3 | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case (Rth(j-c)) | °C/W | -- | -- | 0.78 | ||
Notes:
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%.
2411151443_OSEN-IRF3710PBF_C42381463.pdf
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