450V N CHANNEL Power MOSFET OSEN IRF740PBF Featuring Improved dv dt Capability and Low On Resistance
Key Attributes
Model Number:
IRF740PBF
Product Custom Attributes
Drain To Source Voltage:
450V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-
RDS(on):
440mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
27pF
Number:
1 N-channel
Output Capacitance(Coss):
220pF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
1.1nF
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
IRF740PBF
Package:
TO-220AB
Product Description
Product Overview
The IRF740PBF is a 450V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speed, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Model: IRF740PBF
- Package: TO-220AB
Technical Specifications
| Parameters | Unit | Ratings | Conditions |
| Drain-Source Voltage (VDSS) | V | 450 | |
| Gate-Source Voltage-Continuous (VGS) | V | 30 | |
| Drain Current-Continuous (ID) (Note 2) | A | 11 | Tc=25C |
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 44 | |
| Power Dissipation (PD) (Note 2) | W | 100 | Tc=25C |
| Max.Operating junction temperature (Tj) | 150 | ||
| Drain-Source Breakdown Voltage Current (BVDSS) (Note 1) | V | 450 | ID=250A VGS=0VTJ=25C |
| Gate Threshold Voltage (VGS(th)) | V | 2.0 -- 4.0 | VDS=VGSID=250A |
| Drain-Source On-Resistance (RDS(on)) | -- 0.44 -- | VGS=10VID=5A | |
| Gate-Body Leakage Current (IGSS) | nA | -- -- 100 | VGS=30VVDS=0 |
| Zero Gate Voltage Drain Current (IDSS) | A | -- -- 1 | VDS=400VVGS=0 |
| Forward Transconductance (gfs) | S | 5.8 -- -- | VDS=15VID=5A |
| Turn-On Delay Time (Td(on)) | ns | -- 17 -- | VDS=250VID=11A RG=25Note 2 |
| Rise Time (Tr) | ns | -- 10 -- | |
| Turn-Off Delay Time (Td(off)) | ns | -- 10 -- | |
| Fall Time (Tf) | ns | -- 10 -- | |
| Total Gate Charge (Qg) | nC | -- 35 50 | VDS=400V VGS=10V ID=11ANote 2 |
| Gate-Source Charge (Qgs) | nC | -- 11 -- | |
| Gate-Drain Charge (Qgd) | nC | -- 12 -- | |
| Input Capacitance (Ciss) | pF | -- 1100 -- | VDS=25VVGS=0 f=1MHz |
| Output Capacitance (Coss) | pF | -- 220 -- | |
| Reverse Transfer Capacitance (Crss) | pF | -- 27 -- | |
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- -- 11 | |
| Diode Forward On-Voltage (VSD) | V | -- -- 1.4 | IS=5AVGS=0 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- -- 1.25 |
2410121732_OSEN-IRF740PBF_C34373758.pdf
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