Durable OSEN OSPF9N90 900V N Channel MOSFET Tested for Avalanche Energy in Power Supply Applications
Key Attributes
Model Number:
OSPF9N90
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
RDS(on):
1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Output Capacitance(Coss):
228pF
Pd - Power Dissipation:
47W
Input Capacitance(Ciss):
2.78nF
Gate Charge(Qg):
670nC@10V
Mfr. Part #:
OSPF9N90
Package:
TO-220F
Product Description
OSPF9N90 900V N-CHANNEL MOSFET
The OSPF9N90 is a 900V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. Tested for avalanche energy, this MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Model: OSPF9N90
- Package: TO-220F
Technical Specifications
| Parameters | Unit | Conditions | Value |
| Drain-Source Voltage (VDSS) | V | 900 | |
| Gate-Source Voltage-Continuous (VGS) | V | 30 | |
| Drain Current-Continuous (ID) (Note 2) (Tc=25C) | A | Tc=25C | 9 |
| Drain Current-Single Plused (IDM) (Note 1) | A | 36 | |
| Power Dissipation (PD) (Note 2) | W | 47 | |
| Max.Operating junction temperature (Tj) | 150 | ||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | ID=250A VGS=0VTJ=25C | 900 |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGSID=250A | 2.0 - 4.0 |
| Drain-Source On-Resistance (RDS(on)) | VGS=10VID=4.5A | 1.0 | |
| Gate-Body Leakage Current (IGSS) | nA | VGS=30VVDS=0 | 100 |
| Zero Gate Voltage Drain Current (IDSS) | A | VDS=900VVGS=0 | 10 |
| Forward Transconductance (gfs) | S | VDS=40VID=4.5A | 9.0 |
| Turn-On Delay Time (Td(on)) | ns | VDS=450VID=9A RG=25Note 2 | 55 |
| Rise Time (Tr) | ns | VDS=450VID=9A RG=25Note 2 | 130 |
| Turn-Off Delay Time (Td(off)) | ns | VDS=450VID=9A RG=25Note 2 | 110 |
| Fall Time (Tf) | ns | VDS=450VID=9A RG=25Note 2 | 80 |
| Total Gate Charge (Qg) | nC | VDS=480V VGS=10V ID=9ANote 2 | 670 |
| Gate-Source Charge (Qgs) | nC | VDS=480V VGS=10V ID=9ANote 2 | 13.5 |
| Gate-Drain Charge (Qgd) | nC | VDS=480V VGS=10V ID=9ANote 2 | 27 |
| Input Capacitance (Ciss) | pF | VDS=25VVGS=0 f=1MHz | 2780 |
| Output Capacitance (Coss) | pF | VDS=25VVGS=0 f=1MHz | 228 |
| Reverse Transfer Capacitance (Crss) | pF | VDS=25VVGS=0 f=1MHz | 28 |
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | 9 | |
| Diode Forward On-Voltage (VSD) | V | IS=9AVGS=0 | 1.4 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | 2.7 |
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%.
2504101957_OSEN-OSPF9N90_C45359870.pdf
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