1200 Volt 5 Amp FS Trench IGBT onsemi FGD5T120SH featuring field stop technology and RoHS compliance
Key Attributes
Model Number:
FGD5T120SH
Product Custom Attributes
Td(off):
24.8ns
Pd - Power Dissipation:
69W
Td(on):
4.8ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
2pF
Input Capacitance(Cies):
209pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.5V@5mA
Gate Charge(Qg):
6.7nC
Operating Temperature:
-55℃~+150℃@(Tj)
Output Capacitance(Coes):
11pF
Switching Energy(Eoff):
94uJ
Turn-On Energy (Eon):
247uJ
Mfr. Part #:
FGD5T120SH
Package:
TO-252
Product Description
Product Overview
The FGD5T120SH is a 1200 V, 5 A FS Trench IGBT from ON Semiconductor, utilizing novel field stop IGBT technology. It offers optimum performance for inrush current limitation, lighting, and home appliance applications. Key advantages include FS Trench Technology with a positive temperature coefficient, high speed switching, low saturation voltage (VCE(sat) = 2.9 V @ IC = 5 A), 100% of parts tested for ILM, and high input impedance. This device is RoHS compliant.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Off Characteristics | ||||||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0 V, IC = 250 uA | 1200 | - | - | V |
| BVCES / TJ | Temperature Coefficient of Breakdown Voltage | VGE = 0 V, IC = 250 uA | - | 1.2 | - | V/oC |
| ICES | Collector Cut-Off Current | VCE = VCES, VGE = 0 V | - | - | 250 A | |
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0 V | - | - | 400 nA | |
| On Characteristics | ||||||
| VGE(th) | G-E Threshold Voltage | IC = 5 mA, VCE = VGE | 2.5 | 3.5 | 4.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 5 A, VGE = 15 V | - | 2.9 | 3.6 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 5 A, VGE = 15 V, TC = 150oC | - | 4.5 | - | V |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VCE = 30 V, VGE = 0 V, f = 1 MHz | - | 209 | - | pF |
| Coes | Output Capacitance | - | 11 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 2 | - | pF | |
| Switching Characteristics (TC = 25oC) | ||||||
| Td(on) | Turn-On Delay Time | VCC = 600 V, IC = 5 A, RG = 30 , VGE = 15 V, Inductive Load | - | 4.8 | - | ns |
| Tr | Rise Time | - | 20.8 | - | ns | |
| Td(off) | Turn-Off Delay Time | - | 24.8 | - | ns | |
| Tf | Fall Time | - | 104 | - | ns | |
| Eon | Turn-On Switching Loss | - | 247 | - | uJ | |
| Eoff | Turn-Off Switching Loss | - | 94 | - | uJ | |
| Ets | Total Switching Loss | - | 341 | - | uJ | |
| Switching Characteristics (TC = 150oC) | ||||||
| Td(on) | Turn-On Delay Time | VCC = 600 V, IC = 5 A, RG = 30 , VGE = 15 V, Inductive Load | - | 4.8 | - | ns |
| Tr | Rise Time | - | 40 | - | ns | |
| Td(off) | Turn-Off Delay Time | - | 25.6 | - | ns | |
| Tf | Fall Time | - | 134 | - | ns | |
| Eon | Turn-On Switching Loss | - | 393 | - | uJ | |
| Eoff | Turn-Off Switching Loss | - | 114 | - | uJ | |
| Ets | Total Switching Loss | - | 507 | - | uJ | |
| Gate Charge | ||||||
| Qg | Total Gate Charge | VCC = 600 V, IC = 5 A, VGE = 15 V | - | 6.7 | - | nC |
| Qge | Gate to Emitter Charge | - | 1.8 | - | nC | |
| Qgc | Gate to Emitter Charge | - | 2.6 | - | nC | |
| Thermal Characteristics | ||||||
| RJC (IGBT) | Thermal Resistance, Junction to Case, Max. | - | - | 1.8 | oC/W | |
| RJA | Thermal Resistance, Junction to Ambient, Max. | Mounted on 1 squre PCB (FR4 or G-10 material) | - | - | 50 | oC/W |
2411212325_onsemi-FGD5T120SH_C903665.pdf
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