650 Volt 40 Amp IGBT onsemi FGB40T65SPD-F085 with Rugged Switching and Parallel Operation Capability
Key Attributes
Model Number:
FGB40T65SPD-F085
Product Custom Attributes
Td(off):
35ns
Pd - Power Dissipation:
267W
Td(on):
18ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
1.52nF@30V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@40mA
Gate Charge(Qg):
36nC@40A,15V
Operating Temperature:
-55℃~+175℃
Reverse Recovery Time(trr):
206ns
Switching Energy(Eoff):
280uJ
Turn-On Energy (Eon):
970uJ
Mfr. Part #:
FGB40T65SPD-F085
Package:
D2PAK-3
Product Description
Product Overview
The FGB40T65SPD-F085 is a 650 V, 40 A IGBT utilizing novel field stop 3rd generation technology. It offers optimized performance with low conduction and switching losses for high efficiency, along with enhanced blocking voltage and rugged high current switching reliability. This device is also advantageous for parallel operation. It is copacked with a soft, fast recovery diode and is AEC-Q101 qualified.
Product Attributes
- Brand: onsemi
- Origin: Semiconductor Components Industries, LLC
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Material: Pb-Free
Technical Specifications
| Model | Description | VCES (V) | IC @ TC=25C (A) | IC @ TC=100C (A) | VCE(sat) (Typ.) @ IC=40A (V) | TJ (C) | Package |
| FGB40T65SPD-F085 | Field Stop, Trench IGBT | 650 | 80 | 40 | 2.0 | -55 to +175 | D2PAK-3 (TO-263, 3-LEAD) |
2411220156_onsemi-FGB40T65SPD-F085_C898625.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
