Power MOSFET PJSEMI PJM3018NSA with 2KV ESD Protection and Dissipation in Compact SOT 23 Package
Key Attributes
Model Number:
PJM3018NSA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
500mA
RDS(on):
3Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4pF@5V
Number:
1 N-channel
Input Capacitance(Ciss):
13pF@5V
Pd - Power Dissipation:
350mW
Mfr. Part #:
PJM3018NSA
Package:
SOT-23
Product Description
Product Overview
The PJM3018NSA is an N-Channel Enhancement Mode Power MOSFET designed for switching applications. It features low RDS(ON), a surface mount package, and ESD protection up to 2KV (HBM). With a VDS of 30V and ID of 0.5A, it offers a cost-effective solution for various electronic designs.
Product Attributes
- Brand: PJM (implied by product code PJM3018NSA)
- Package: SOT-23
- ESD Protected (HBM) up to 2KV
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 0.5 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note1 | 357 | ° C/W | ||
| Electrical Characteristics (Ta=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250µA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±10 | µA |
| Gate Threshold Voltage | VGS(th) | Note2 VDS=VGS,ID=250µA | 0.8 | -- | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note2 VGS=10V,ID=0.3A | -- | 2 | 3 | Ω |
| Drain-Source On-Resistance | RDS(on) | Note2 VGS=4.5V,ID=0.2A | -- | 2.5 | 4 | Ω |
| Forward Transconductance | gFS | Note2 VDS=3V,ID=10mA | 20 | -- | -- | mS |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=5V,VGS=0V,f=1MHz | -- | 13 | -- | pF |
| Output Capacitance | Coss | -- | 9 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 4 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=5V,RL=500Ω,ID=10mA VGS=5V,RGEN=10Ω | -- | 13 | -- | nS |
| Turn-on Rise Time | tr | -- | 35 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 80 | -- | nS | |
| Turn-off Fall Time | tf | -- | 80 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note2 VGS=0V,IS=0.5A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note1 | -- | -- | 0.5 | A |
2412311540_PJSEMI-PJM3018NSA_C42431774.pdf
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