N Channel MOSFET OSEN OSH50N50 500V designed for power factor correction and switch mode power supplies
Key Attributes
Model Number:
OSH50N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
50A
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Output Capacitance(Coss):
560pF
Input Capacitance(Ciss):
6.7nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
OSH50N50
Package:
TO-3PNB
Product Description
Product Overview
The OSEN OSH50N50 is a 500V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. This MOSFET is tested for avalanche energy and is suitable for use in high-efficiency switch-mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China (implied by .cn domain)
- Publication Order Number: OSH50N50
- Revision: 21.2.10
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions | ||
| VDSS | Drain-Source Voltage | 500 | V | |||
| VGS | Gate-Source Voltage-Continuous | 30 | V | |||
| ID | Drain Current-Continuous (Note 2) | 50 | A | |||
| IDM | Drain Current-Single Pulsed (Note 1) | 200 | A | |||
| PD | Power Dissipation (Note 2) | 375 | W | |||
| Tj Max. | Operating junction temperature | 150 | ||||
| BVDSS | Drain-Source Breakdown Voltage (Note 1) | 500 | V | ID=250AVGS=0VTJ=25C | ||
| VGS(th) | Gate Threshold Voltage | 2 | -- | 4.0 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance | -- | 0.07 | -- | VGS=10VID=20A | |
| IGSS | Gate-Body Leakage Current | -- | -- | 100 | nA | VGS=30VVDS=0 |
| IDSS | Zero Gate Voltage Drain Current | -- | -- | 1 | A | VDS=500VVGS=0 |
| gfs | Forward Transconductance | -- | 35 | -- | S | VDS=30VID=15A |
| Tdon | Turn-On Delay Time | -- | 80 | -- | ns | VDS=400VID=20ARG=10Note 2 |
| Tr | Rise Time | -- | 240 | -- | ns | |
| Tdoff | Turn-Off Delay Time | -- | 220 | -- | ns | |
| Tf | Fall Time | -- | 65 | -- | ns | |
| Qg | Total Gate Charge | -- | 160 | -- | nC | VDS=400V VGS=10VID=20ANote 2 |
| Qgs | Gate-Source Charge | -- | 38 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 50 | -- | nC | |
| Ciss | Input Capacitance | -- | 6700 | -- | pF | VDS=25VVGS=0f=1MHz |
| Coss | Output Capacitance | -- | 560 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 35 | -- | pF | |
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | -- | -- | 50 | A | |
| VSD | Diode Forward On-Voltage | -- | -- | 1.2 | V | IS=20AVGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | -- | -- | 0.33 | /W |
Notes:
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%.
2504101957_OSEN-OSH50N50_C47148331.pdf
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