Power semiconductor OSEN OGH50T65 Silicon FS Trench IGBT ideal for industrial UPS and welding machine
Key Attributes
Model Number:
OGH50T65
Product Custom Attributes
Td(off):
125ns
Td(on):
45ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Reverse Recovery Time(trr):
50ns
Mfr. Part #:
OGH50T65
Package:
TO-3PNB
Product Description
Product Overview
The OGH50T65 is a Silicon FS Trench IGBT designed for high-reliability applications. It offers reduced saturation pressure and fast switching speeds, making it easy to use in parallel configurations. Key benefits include high reliability, thermal stability, and a built-in quick-recovery diode. This IGBT is suitable for use in frequency transformers, UPS systems, and inverter welding machines.
Product Attributes
- Brand: OSEN
- Product Type: Silicon FS Trench IGBT
- Package Type: TO-3PNB
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| VCES | Maximum collector-emitter DC voltage | 650 | V | |
| VGES | Maximum gate-emitter DC voltage | ±20 | V | |
| IC | Collector DC current (Tc=25°C) | 100 | A | |
| IC | Collector DC current (Tc=100°C) | 50 | A | |
| IF | Diode current | 30 | A | |
| Tstg | Storage temperature range | -55~150 | °C | |
| Tj Max. | Operating junction temperature | 175 | °C | |
| Electrical Characteristics | ||||
| VCES | Collector-emitter breakdown voltage | 650 | V | VGE=0V,ICE=250µA |
| ICES | Collector drain current under zero gate pressure | -- | 5.0 µA | VGE=0V,VCE=650V |
| IGES | Gate body drain current | -- | ±1 µA | VGE=±20V |
| VCE(sat) | Collector-emitter saturation pressure drop | -- | 2.2 - 2.5 V | IC=50A ,VGE=15V |
| VGE(th) | Threshold voltage | 4.0 - 6.5 | V | IC=250µA,VCE=VGE |
| VFM | Diode forward pressure drop | -- | 1.45 - 1.8 V | IF=30A |
| Switching Characteristics | ||||
| Td(on) | Turn-On Delay Time | -- | 45 ns | VCE=400V,IC=50A, Rg=10Ω,VGE=15V, Inductive Load,Ta=25°C |
| Tr | Rise Time | -- | 145 ns | |
| Td(off) | Turn-Off Delay Time | -- | 125 ns | |
| Tf | Fall Time | -- | 130 ns | |
| Qg | Total Gate Charge | -- | 145 nC | VCE=400V,IC=50A, VGE=15V |
| Qgs | Gate-Source Charge | -- | 48 nC | |
| Qgd | Gate-Drain Charge | -- | 46 nC | |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | -- | 4530 pF | VCE=30V,VGE=0V f=1MHz |
| Coss | Output Capacitance | -- | 90 pF | |
| Crss | Reverse Transfer Capacitance | -- | 41 pF | |
| Trr | Reverse recovery time | -- | 38 - 50 nS | IF=0.5A IR=1A Irr=0.25A |
| Rth(j-c) | Thermal Resistance, Junction to Case | -- | 0.52 °C/W | |
2504101957_OSEN-OGH50T65_C45359865.pdf
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