PJSEMI PJM20N60SQ N Channel Power MOSFET Featuring 20 Amp Drain Current and Low RDS On for Switching
Key Attributes
Model Number:
PJM20N60SQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
35mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
500pF@30V
Gate Charge(Qg):
47nC@10V
Mfr. Part #:
PJM20N60SQ
Package:
SOT-89
Product Description
Product Overview
The PJM20N60SQ is a N-Channel Enhancement Mode Power MOSFET designed for power switching applications. It features advanced trench technology, offering a low RDS(on) of less than 35m at VGS=10V and a high continuous drain current of 20A. This RoHS and Reach compliant component is halogen and antimony free, suitable for uninterruptible power supply systems.
Product Attributes
- Brand: Pingjingsemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous (Note 1) | ID | 20 | A | |||
| Drain Current-Pulsed (Note 2) | IDM | 60 | A | |||
| Maximum Power Dissipation | PD | 2 | W | |||
| Junction Temperature | TJ | 175 | °C | |||
| Storage Temperature Range | TSTG | -55 | +175 | °C | ||
| Thermal Resistance,Junction-to-Case (Note 3) | RθJC | 5 | °C/W | |||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage (Note 4) | VGS(th) | VDS=VGS,ID=250μA | 1 | 1.7 | 2.5 | V |
| Drain-Source On-Resistance (Note 4) | RDS(on) | VGS=10V,ID=10A | -- | 23 | 35 | mΩ |
| Forward Transconductance (Note 4) | gFS | VDS=5V,ID=5A | 11 | -- | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHz | -- | 500 | -- | pF |
| Output Capacitance | Coss | -- | 60 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 25 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=2A VGS=10V,RGEN=3Ω | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | -- | 2.8 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 9 | -- | nS | |
| Turn-off Fall Time | tf | -- | 5 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage (Note 4) | VSD | VGS=0V,IS=10A | -- | -- | 1.5 | V |
| Diode Forward Current (Note 3) | IS | -- | -- | 10 | A | |
2412050943_PJSEMI-PJM20N60SQ_C42405713.pdf
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