Electronic dual NPN transistor PAKER MMDT3904 plastic encapsulated with low cutoff current in SOT363

Key Attributes
Model Number: MMDT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
-
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMDT3904
Package:
SOT-23
Product Description

Product Overview

The MMDT3904 is a plastic-encapsulated dual NPN transistor in a SOT-363 package. It features epitaxial planar die construction, high stability, and high reliability. This complementary pair is suitable for various electronic applications.

Product Attributes

  • Brand:
  • Origin: Shenzhen, China
  • Package Type: SOT-363
  • Material: Epoxy UL: 94V-0
  • Certifications: Halogen free and RoHS compliant
  • Marking: K6N

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-Base Breakdown VoltageV(BR)CBOIC=10A,IE=060V
Collector-Emitter Breakdown VoltageV(BR)CEOIC=1mA,IB=040V
Emitter-Base Breakdown VoltageV(BR)EBOIE=10A,IC=05V
Collector Cut-off CurrentICBOVCB=30V,IE=050nA
Emitter Cut-off CurrentIEBOVEB=5V,IC=050nA
DC Current GainhFE(1)VCE=1V,IC=0.1mA40
hFE(2)VCE=1V,IC=1mA70
hFE(3)VCE=1V,IC=10mA100300
hFE(4)VCE=1V,IC=50mA60
hFE(5)VCE=1V,IC=100mA30
Collector-Emitter Saturation VoltageVCE(sat)1IC=10mA,IB=1mA0.2V
VCE(sat)2IC=50mA,IB=5mA0.3V
Base-Emitter Saturation VoltageVBE(sat)1IC=10mA,IB=1mA0.650.85V
VBE(sat)2IC=50mA,IB=5mA0.95V
Transition FrequencyfTVCE=20V,IC=10mA,f=100MHz300MHz
Switching TimetdVCC=3V, VBE(off)=-0.5V, IC=10mA , IB1=-IB2= 1mA35nS
trVCC=3V, IC=10mA , IB1=-IB2= 1mA35nS
Switching TimetsVCC=3V, IC=10mA, IB1=-IB2=1mA200nS
tfVCC=3V, IC=10mA, IB1=-IB2=1mA50nS

2411220011_PAKER-MMDT3904_C5278913.pdf

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