Power MOSFET PJSEMI PJM10N40PA N Channel Enhancement Mode for load switching PWM and power management
Key Attributes
Model Number:
PJM10N40PA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
114pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
1.25nF
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
PJM10N40PA
Package:
SOP-8
Product Description
Product Overview
The PJM10N40PA is an N-Channel Enhancement Mode Power MOSFET designed for efficient load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, making it a reliable choice for various electronic designs.
Product Attributes
- Brand: Pingjing Semiconductor
- Origin: China
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 10 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 40 | A | ||
| Single Pulsed Avalanche Energy | EAS | Note4 | 6.8 | mJ | ||
| Maximum Power Dissipation | PD | 2.5 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 40 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250A | 1.1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=8A | -- | 12.5 | 18 | m |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=5A | -- | 16 | 25 | m |
| Forward Transconductance | gFS | Note3, VDS=5V,ID=1A | -- | 6 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V,VGS=0V,f=1MHz | -- | 1250 | -- | pF |
| Output Capacitance | Coss | VDS=20V,VGS=0V,f=1MHz | -- | 114 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V,VGS=0V,f=1MHz | -- | 85 | -- | pF |
| Total Gate Charge | Qg | VDS=20V, VGS=10V,ID=5A | -- | 20 | -- | nC |
| Gate-Source Charge | Qgs | VDS=20V, VGS=10V,ID=5A | -- | 3.5 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=20V, VGS=10V,ID=5A | -- | 4.2 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=20V,VGS=10V, ID=10A RGEN=3, RL=1 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | VDD=20V,VGS=10V, ID=10A RGEN=3, RL=1 | -- | 9 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=20V,VGS=10V, ID=10A RGEN=3, RL=1 | -- | 32 | -- | nS |
| Turn-off Fall Time | tf | VDD=20V,VGS=10V, ID=10A RGEN=3, RL=1 | -- | 16 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=10A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 10 | A |
2410010403_PJSEMI-PJM10N40PA_C30187475.pdf
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