N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for Amplifier Circuits
Key Attributes
Model Number:
BF256B
Product Custom Attributes
Ciss-Input Capacitance:
-
Operating Temperature:
-55℃~+150℃
FET Type:
1 N-channel
Pd - Power Dissipation:
350mW
Drain Current (Idss):
-
RDS(on):
-
Gate-Source Breakdown Voltage (Vgss):
-
Gate-Source Cutoff Voltage (VGS(off)):
500mV@10nA
Mfr. Part #:
BF256B
Package:
TO-92-3
Product Description
ON Semiconductor BF256B N-Channel RF Amplifiers
The BF256B is an N-Channel RF Amplifier designed for VHF/UHF applications. Sourced from process 50, this device offers reliable performance for amplifier circuits.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Product Type: N-Channel RF Amplifier
- Part Number: BF256B
- Top Mark: BF256B
- Package: TO-92 3L
- Origin: Sourced from process 50
Technical Specifications
| Parameter | Conditions | Min. | Max. | Unit |
|---|---|---|---|---|
| Gate-Source Breakdown Voltage (V(BR)GSS) | VDS = 0, IG = 1 A | -30 | V | |
| Gate-Source Voltage (VGS) | VDS = 15 V, ID = 200 A | -0.5 | -7.5 | V |
| Gate-Source Cut-Off Voltage (VGS(off)) | VDS = 15 V, ID = 10 nA | -0.5 | -8.0 | V |
| Gate Reverse Current (IGSS) | VGS = -20 V, VDS = 0 | -5 | nA | |
| Zero-Gate Voltage Drain Current (IDSS) | VDS = 15 V, VGS = 0 | 6 | 13 | mA |
| Common Source Forward Transconductance (gfs) | VDS = 15 V, VGS = 0, f= 1 kHz | 4.5 | mmhos | |
| Drain-Gate Voltage (VDG) | 30 | V | ||
| Gate-Source Voltage (VGS) | -30 | V | ||
| Forward Gate Current (IGF) | 10 | mA | ||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | 150 | C | |
| Total Device Dissipation (PD) at TA = 25C | 350 | mW | ||
| Derate Above 25C | 2.8 | mW/C |
Note: Part numbers containing underscores (_) from Fairchild may have been updated to dashes (-) to comply with ON Semiconductor's system requirements. Please verify updated device numbers on the ON Semiconductor website.
2411272026_onsemi-BF256B_C2892081.pdf
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