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quality 200 volt 10 amp diode POWER INTEGRATIONS LQA10N200CQ designed for power conversion and reduced EMI factory
quality 200 volt 10 amp diode POWER INTEGRATIONS LQA10N200CQ designed for power conversion and reduced EMI factory

200 volt 10 amp diode POWER INTEGRATIONS LQA10N200CQ designed for power conversion and reduced EMI

Key Attributes
Model Number: LQA10N200CQ
Product Custom Attributes
Mfr. Part #:
LQA10N200CQ
Product Description

Product Overview

The LQA10T200C and LQA10N200C are Qspeed Family 200 V, 10 A Common-Cathode Diodes featuring the lowest QRR of any 200 V Silicon diode. Their advanced recovery characteristics enhance efficiency, reduce EMI, and eliminate the need for snubbers. These diodes are suitable for AC/DC and DC/DC output rectification, output and freewheeling diodes, motor drive circuits, and DC-AC inverters.

Product Attributes

  • Brand: Qspeed
  • Compliance: RoHS Compliant
  • Material: Lead-free plating and Green mold compound
  • Halogen Free: Yes (per IEC 61249-2-21)

Technical Specifications

ModelIF(AVG) per diodeVRRMQRR (Typ at 125 C)IRRM (Typ at 125 C)Softness tb/ta (Typ at 125 C)Package
LQA10T200C5 A200 V32.4 nC2.6 A0.39TO-220AB
LQA10N200C5 A200 V32.4 nC2.6 A0.39TO-252 DPAK
ParameterConditionsRatingUnitsNotes
Peak repetitive reverse voltageTJ = 25 C200VVRRM
Average forward currentPer Diode, TJ = 150 C, TC = 130 C5AIF(AVG)
Average forward currentPer Device, TJ = 150 C, TC = 130 C10AIF(AVG)
Non-repetitive peak surge currentPer Diode, 60 Hz, cycle60AIFSM
Non-repetitive peak surge currentPer Diode, cycle of t = 28 s Sinusoid, TC = 25 C350AIFSM
Operating junction temperature range55 to 150CTJ
Storage temperature55 to 150CTSTG
Lead soldering temperatureLeads at 1.6mm from case, 10 sec300C
Power dissipationTC = 25 C27.7WPD
Junction to ambient thermal resistanceTO-220AB (only)62C/WRJA
Junction to case thermal resistancePer Diode4.5C/WRJC
Junction to case thermal resistancePer Device2.3C/WRJC
Reverse current per diodeVR = 200 V, TJ = 25 C250AIR
Reverse current per diodeVR = 200 V, TJ = 125 C0.23mAIR
Forward voltage per diodeIF = 5 A, TJ = 25 C0.95 - 1.1VVF
Forward voltage per diodeIF = 5 A, TJ = 150 C0.8VVF
Junction capacitance per diodeVR = 10 V, 1 MHz22pFCJ
Reverse recovery time, per diodedIF/dt = 200 A/s, VR = 130 V, IF = 5 A, TJ = 25 C13.9nstRR
Reverse recovery time, per diodedIF/dt = 200 A/s, VR = 130 V, IF = 5 A, TJ = 125 C19.5nstRR
Reverse recovery charge, per diodedIF/dt = 200 A/s, VR = 130 V, IF = 5 A, TJ = 25 C15.6 - 25.5nCQRR
Reverse recovery charge, per diodedIF/dt = 200 A/s, VR = 130 V, IF = 5 A, TJ = 125 C32.4nCQRR
Maximum reverse recovery current, per diodedIF/dt = 200 A/s, VR = 130 V, IF = 5 A, TJ = 25 C1.78 - 2.65AIRRM
Maximum reverse recovery current, per diodedIF/dt = 200 A/s, VR = 130 V, IF = 5 A, TJ = 125 C2.6AIRRM
Softness per diodedIF/dt = 200 A/s, VR = 130 V, IF = 5 A, TJ = 25 C0.44S
Softness per diodedIF/dt = 200 A/s, VR = 130 V, IF = 5 A, TJ = 125 C0.39S

2504101957_POWER-INTEGRATIONS-LQA10N200CQ_C21118489.pdf

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